Diodes AP2501/AP2511 - Manual (Page 4)

AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
4 of 18
www.diodes.com
March 2013
© Diodes Incorporated
AP2501/AP2511
Electrical Characteristics
(@ T
A
= +25°C, V
IN
= +5.0V, C
IN
= 0.1µF, C
L
= 1µF,unless otherwise specified.)
Symbol Parameter Conditions (Note 7) Min Typ Max Unit
V
UVLO
Input UVLO V
IN
rising 1.6 2.0 2.4 V
ΔV
UVLO
Input UVLO Hysteresis V
IN
decreasing 50 mV
I
SHDN
Input Shutdown Current Disabled, OUT = open 0.1 1.0 µA
I
Q
Input Quiescent Current Enabled, OUT = open 60 100 µA
I
LEAK
Input Leakage Current Disabled, OUT grounded 0.1 1.0 µA
I
REV
Reverse Leakage Current Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
0.01 1.00 µA
R
DS(ON)
Switch on-resistance
V
IN
= 5V, I
OUT
= 1A
T
A
= 25 o C 70 78
mΩ
-40°C ≤ T
A
≤ 85°C 105
V
IN
= 3.3V, I
OUT
= 1A
T
A
= 25 o C 90 108
-40°C ≤ T
A
≤ 85°C 135
I
LIMIT
Over-Load Current Limit (Note 7) V
IN
= 5V, V
OUT
= 4.5V -40°C≤ T
A
≤85°C 2.8 3.7 4.6 A
I
TRIG
Current limiting trigger threshold Output Current Slew rate (<100A/s) 3.7 A
I
SHORT
Short-Circuit Current Limit Enabled into short circuit 3.7 A
T
SHORT
Short-Circuit Response Time V
OUT
= 0V to I
OUT
= I
LIMIT
(OUT shorted to ground) 2 µs
V
IL
EN Input Logic Low Voltage V
IN
= 2.7V to 5.5V 0.8 V
V
IH
EN Input Logic High Voltage V
IN
= 2.7V to 5.5V 2 V
I
LEAK-EN
EN Input leakage V
IN
= 5V, V
EN
= 0V and 5.5V 0.01 1.00 µA
I
LEAK-O
Output leakage current Disabled, V
OUT
= 0V 0.5 1 µA
T
D(ON)
Output turn-on delay time C
L
= 1µF, R
LOAD
= 5Ω 0.1 ms
T
R
Output turn-on rise time C
L
= 1µF, R
LOAD
= 5Ω 0.6 1.5 ms
T
D(OFF)
Output turn-off delay time C
L
= 1µF, R
LOAD
= 5Ω 0.1 ms
T
F
Output turn-off fall time C
L
= 1µF, R
LOAD
= 5Ω 0.05 0.10 ms
R
FLG
FLG output FET on-resistance I
FLG
= 10mA 20 40 Ω
I
FOH
FLG Off Current V
FLG
= 5V 0.01 1.00 µA
T
BLANK
FLG Blanking Time
Assertion or deassertion due to overcurrent and
over-temperature condition
4 7 15 ms
T
DIS
Discharge time C
L
= 1µF, V
IN
= 5V, disabled to V
OUT
< 0.5V 0.6 ms
R
DIS
Discharge resistance (Note 8) V
IN
= 5V, disabled, I
OUT
= 1mA 100 Ω
T
SHDN
Thermal Shutdown Threshold Enabled 140 C
T
HYS
Thermal Shutdown Hysteresis 20 C
θ
JA
Thermal Resistance Junction-to-
Ambient
SO-8 (Note 9) 96 C/W
MSOP-8 (Note 9) 130 C/W
MSOP-8EP (Note 10) 92 C/W
U-DFN3030-8 (Note 10) 84 C/W
U-DFN2020-6 (Note 11) 90 C/W
Notes: 7. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
8. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when V
IN
< V
UVLO
). The
discharge function offers a resistive discharge path for the external storage capacitor for limited time.
9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
10. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
11. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground