Diodes AP139 - Manual (Page 4)

AP139
300mA LOW-NOISE CMOS LDO
AP139 Rev. 6 4 of 7 FEBRUARY 2009
www.diodes.com © Diodes Incorporated
Typical Application
AP139
BYP EN
V
OUT
GND
V
IN
C1
1uF
C2
10nF
C3
1uF
IN OUT
Typical Performance Characteristics
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
Power Supply Rejection Ratio
PS
R
R
(dB
)
Frequency (Hz)
BP = 1nF
BP = 5nF
BP = 10nF
BP = 20nF
Iout = 100mA
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
Power Supply Rejection Ratio
PS
R
R
(d
B)
Frequency (Hz)
100mA
10mA
1mA
BP = 10nF
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
1 0 0
3 . 5 4 4 . 5 5 5 . 5 6
V c c V s Q u i e s c e n t C u r r e n t
V c c ( V )
Q
u
ie
s
c
e
n
t
C
u
rren
t (
μ
A)
T A = 2 5 ℃