Data sheet, Electrical characteristics (continued) – Diodes AP2111 User Manual

Page 11

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Data Sheet

600mA CMOS LDO REGULATOR WITH ENABLE AP2111

Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited

11

Electrical Characteristics (Continued)

AP2111-3.3 Electrical Characteristic (Note 2)

V

IN

=4.3V, C

IN

=1

μF (Ceramic), C

OUT

=1

μF (Ceramic), Typical T

A

=25°C, Bold typeface applies over -40°C≤T

A

≤85°C ranges,

unless otherwise specified (Note 3).

Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at

T

A

=25

°C

. Over temperature specifications guaranteed by design only.

Parameter Symbol

Conditions Min

Typ

Max

Unit

Output Voltage

V

OUT

V

IN

=4.3V, 1mA ≤ I

OUT

≤ 30mA

V

OUT

×98.5%

3.3

V

OUT

×101.5%

V

Maximum Output Current

I

OUT(Max)

V

IN

=4.3V, V

OUT

=3.251V to

3.350V

600 mA

Load Regulation

( V

OUT

/V

OUT

)

I

OUT

V

IN

=4.3V, 1mA ≤ I

OUT

≤600mA

0.2 %/A

Line Regulation

( V

OUT

/V

OUT

)

V

IN

4.3V≤V

IN

≤6V, I

OUT

=30mA

0.02

%/V

Dropout Voltage

V

DROP

I

OUT

=10mA

5

8

mV

I

OUT

=300mA

125

200

I

OUT

=600mA

250

400

Quiescent Current

I

Q

V

IN

=4.3V, I

OUT

=0mA

55

80

μA

Standby Current

I

STD

V

IN

=4.3V, V

EN

in OFF mode

0.01

1.0

μA

Power Supply Rejection
Ratio

PSRR

Ripple 0.5Vp-p
V

IN

=4.3V,

I

OUT

=100mA

f=100Hz 65

dB

f=1kHz

65

Output Voltage
Temperature Coefficient

( V

OUT

/V

OUT

)

T

I

OUT

=30mA

T

A

=-40°C to 85°C

±100

ppm/°C

Short Current Limit

I

SHORT

V

OUT

=0V

50

mA

RMS Output Noise

V

NOISE

No Load, 10Hz ≤ f ≤100kHz 50

μV

RMS

VEN High Voltage

V

IH

Enable logic high, regulator on

1.5

6.0

V

VEN Low Voltage

V

IL

Enable logic low, regulator off

0

0.4

Start-up Time

t

S

No Load

20

μs

EN Pull Down Resistor

R

PD

3.0 m

Ω

VOUT Discharge Resistor

R

DCHG

Set EN pin at Low

60

Ω

Thermal Shutdown
Temperature

T

OTSD

160

°C

Thermal Shutdown
Hysteresis

T

HYOTSD

30

Thermal Resistance
(Junction to Case)

 

θ

JC

SOIC-8

74.6

°C /W

PSOP-8

43.7

SOT-223

50.9

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