Ap133, Electrical characteristics – Diodes AP133 User Manual

Page 5

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AP133

300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT

LOW DROPOUT LINEAR REGULATOR

AP133 Rev. 6

5 of 15

FEBRUARY 2009

www.diodes.com

©

Diodes Incorporated

Electrical Characteristics



(T

A

= 25

o

C, V

IN

= V

OUT

+1V, C

IN

= 1uF, C

OUT

= 1uF, V

EN

= 2V, unless otherwise stated)

Symbol

Parameter

Test Conditions

Min Typ. Max

Unit

I

Q

Input Quiescent Current

I

OUT

= 0~300mA

40 60 uA

I

SHDN

Input Shutdown Current

V

EN

= 0V, I

OUT

= 0

1 uA

I

LEAK

Input Leakage Current

V

EN

= 0V, OUT grounded

1 uA

V

Dropout

Dropout Voltage

V

OUT

≥ 1.5V, I

OUT

= 300mA

350

450 mV

V

REF

ADJ reference voltage

I

OUT

= 0

0.8

V

I

ADJ

ADJ leakage

1 uA

V

OUT

Output Voltage Accuracy

-2

2

%

ΔV

OUT

/

ΔV

IN

/V

Line Regulation

V

IN

= V

OUT

+1V to 5.5V,

I

OUT

= 1mA

0.05 %/V

ΔV

OUT

/V

OUT

Load Regulation

I

OUT

from 1mA to 300mA

-1

1

%

t

ST

Start-up Time

V

EN

= 0V to 2.0V,

I

OUT

= 300mA

25 us

PSRR PSRR 1kHz,

I

OUT

= 0mA

65

dB

I

SHORT

Short-circuit Current

V

IN

= 5.0V, V

OUT

< 0.2V

120

mA

I

LIMIT

Current limit

V

OUT

= 3V, R

OUT

= 3

Ω 400

600

mA

V

IL

EN Input Logic Low Voltage

0.4

V

V

IH

EN Input Logic High Voltage

1.4

V

I

EN

EN Input leakage

V

EN

= 0V or 5.5V

-1

1

uA

T

SHDN

Thermal shutdown threshold

145

°C

T

HYS

Thermal shutdown hysteresis

20

°C

θ

JA

Thermal Resistance
Junction-to-Ambient

SOT25

Device mounted on FR-4
substrate, 2oz copper, with
minimum recommended pad
layout.

176

o

C/W

DFN2020-6

142

θ

JC

Thermal Resistance
Junction-to-Case

SOT25

41

o

C/W

DFN2020-6

36






















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