Diodes AP2126 - Manual (Page 5)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126
5
BCD Semiconductor Manufacturing Limited
Data Sheet
Sep. 2012 Rev. 1. 5
Electrical Characteristics
(AP2126-ADJ, V
IN
min=3.0V, C
IN
=1 μF, C
OUT
=1 μF, Bold typeface applies over -40 o C ≤T
A
≤85 o C, unless otherwise specified.)
Parameter Symbol Conditions Min Typ Max Unit
Reference Voltage V
REF
V
IN
=3.0V
1mA ≤I
OUT
≤300mA
1.225 1.25 1.275 V
Input Voltage V
IN
3.0 6 V
Maximum Output Current I
OUT(MAX)
V
IN
=3.0V,
V
OUT
=98% ×V
OUT
300 400 mA
Load Regulation
ΔV
OUT
/( ΔI
OUT*
V
OUT
)
V
IN
=3.0V,
1mA ≤I
OUT
≤300mA
0.6 %/A
Line Regulation
ΔV
OUT
/( ΔV
IN
*V
OUT
)
V
IN
=3.0V to 6V
I
OUT
=30mA
0.06 %/V
Quiescent Current I
Q
V
IN
=3.0V, I
OUT
=0mA 60 90 μA
Standby Current I
STD
V
IN
=3.0V,
V
SHUTDOWN
in off mode
0.1 1.0 μA
Power Supply
Rejection Ratio
PSRR
Ripple 1Vp-p
V
IN
=3.5V
f=100Hz 68 dB
f=1KHz 68 dB
f=10KHz 54 dB
Output Voltage
Temperature Coefficient ( ΔV
OUT
/V
OUT
)
/ ΔT
I
OUT
=30mA, -40 o C ≤T
A
≤85 o C ± 100 ppm/ o C
Short Current Limit I
SHORT
V
OUT
=0V 50 mA
Soft Start Time t
UP
50 μs
RMS Output Noise V
NOISE
T
A
=25 o C, 10Hz ≤f≤100kHz,
V
OUT
=1.25V
80 μ Vrms
Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V
Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V
V
OUT
Discharge MOSFET
R
DS(ON)
Shutdown input voltage "Low" 60 Ω
Shutdown Pull Down Resis-
tance
3 M Ω
Thermal Shutdown 165 o C
Thermal Shutdown Hysteresis 30 o C
Thermal Resistance θ
JC
SOT-23-5 150 o C/W