Diodes AP7217C - Manual (Page 4)

AP7217C
1.25V 600mA CMOS LDO
AP7217C Rev. 3 4 of 9 OCTOBER 2009
DS31424 www.diodes.com © Diodes Incorporated
Electrical Characteristics
(T
A
= 25 °C, C
IN
= 1µF, C
OUT
= 1µF, V
EN
= V
IN
, unless otherwise noted)
Symbol Parameter Test Conditions Min Typ. Max Unit
I
Q
Quiescent Current I
O
= 0mA - 40 60 µA
I
STB
Standby Current
V
EN
= Off
V
IN
= 5.0V
2 5 µA
Output Voltage
Accuracy
I
O
= 30mA, V
IN
= 5V 1.225 1.25 1.275 V
V
OUT
V
OUT
Temperature
Coefficient
-40
°C to 85°C, I
OUT
= 30mA ±100 ppm / o C
I
OUT
= 100mA, V
OUT
= 1.25V 1250
V
DROPOUT
Dropout Voltage
I
OUT
= 600mA, V
OUT
= 1.25V 2000
mV
I
OUT
Maximum Output
Current
V
IN
= 5.3V 600 mA
I
LIMIT
Current Limit V
IN
= 5.3V 750 mA
I
SHORT
Short Circuit Current V
IN
= 5.3V 70 mA
∆V
LINE
/
∆V
IN
/V
OUT
Line Regulation 4.3V ≤ V
IN
≤ 5.5V; I
OUT
= 30mA 0.01 ±0.2 %/V
∆V
OUT
Load Regulation 1mA ≤ I
OUT
≤ 100mA, V
IN
= 5.3V 10 20 mV
PSRR
Power Supply
Rejection V
IN
= 4.3V+ 0.5Vp-pAC,
I
OUT
= 50mA
F = 1KHz 55 dB
V
EH
Output ON 1.6 V
V
EL
EN Input Threshold
Output OFF 0.25 V
I
EN
Enable Pin Current -0.1 0.1 µA
θ
JA
Thermal Resistance
Junction-to-Ambient
SOP-8L-EP (Note 3) 82 ºC/W
θ
JC
Thermal Resistance
Junction-to-Case
SOP-8L-EP (Note 3) 12 ºC/W
Notes: 3. Test condition for SOP-8L-EP: Device mounted on 2oz copper, minimum recommended pad layout on top & bottom layer with thermal vias,
double sided FR-4 PCB.