Diodes AP7217D - Manual (Page 4)

AP7217D
1.2V 600mA CMOS LDO
AP7217D Rev. 2 4 of 9 FEBRUARY 2009
www.diodes.com © Diodes Incorporated
Electrical Characteristics
(T
A
= 25
°C, C
IN
= 1µF, C
OUT
= 1µF, V
IN
=5V, unless otherwise noted)
Symbol Parameter Test Conditions Min Typ. Max Unit
I
Q
Quiescent Current I
O
= 0mA - 40 60 μA
V
OUT
Output Voltage
Accuracy
I
O
= 30mA 1.176 1.2 1.224 V
V
OUT
Temperature
Coefficient
-40
°C to 85°C, I
OUT
= 30mA - ±100 - ppm / o C
V
DROPOUT
Dropout Voltage I
OUT
= 600mA, V
OUT
= 1.2V - 850 1300 mV
I
OUT
Maximum Output
Current
600 - - mA
I
LIMIT
Current Limit - 850 - mA
I
SHORT
Short Circuit Current - 200 - mA
ΔV
LINE
Line Regulation 2.5V ≤ V
IN
≤ 5.5V; I
OUT
= 30mA - 0.2 - %/V
ΔV
LOAD
Load Regulation
(Note 4) 1mA ≤ I
OUT
≤ 300mA 15 35 mV
1mA ≤ I
OUT
≤ 600mA 30 55 mV
PSRR
Power Supply
Rejection V
IN
= 4.3V+0.5Vp-pAC,
I
OUT
= 50mA
F = 1KHz - 55 - dB
Thermal Shutdown
Temperature
- 150 - ºC
Thermal Shutdown
Hysteresis
- 30 - ºC
θ
JA
Thermal Resistance
Junction-to-Ambient
SOT89-3L (Note 5) - 173 - ºC/W
θ
JC
Thermal Resistance
Junction-to-Case
SOT89-3L (Note 5) - 51 - ºC/W
Notes: 4. Regulation is measured at constant junction temperature by low duty cycle pulse testing.
5. Test condition for SOT89-3L: Devices mounted on FR-4 substrate, single sided PC board, 2oz copper, with minimum recommended pad layout,
no air flow.
Typical Application