Al3158, New prod uc t absolute maximum ratings, Recommended operating conditions – Diodes AL3158 User Manual

Page 3: Electrical characteristics

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AL3158

HIGH EFFICIENCY 1x/2x CHARGE PUMP

FOR WHITE LED APPLICATIONS

AL3158

Document number: DS35047 Rev. 2 - 2

3 of 10

www.diodes.com

January 2011

© Diodes Incorporated

NEW PROD

UC

T

Absolute Maximum Ratings

(Note 2)

Symbol

Description

Rating

Unit

ESD HBM

Human Body Model ESD Protection

2

KV

ESD MM

Machine Model ESD Protection

200

V

V

IN

Input Voltage

-0.3 to 6

V

V

EN1,2,3

EN1, EN2, EN3 to GND Voltage

-0.3 to V

IN

+0.3

V

I

OUT

Maximum DC Output Current

270

mA

T

J

Operating Junction Temperature Range

150

°C

T

LEAD

Maximum Soldering Temperature (at leads, 10 sec)

300

°C

Notes: 2. Exceeding Absolute Maximum Ratings will cause permanent damage to the device.

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

V

IN

Input

Voltage

2.7 5.5

V

T

A

Operating Ambient Temperature

-40

85

°C

Electrical Characteristics

(T

A

= 25

°C, Vin

= 3.6V, C

IN

= C

OUT

= 2.2µF, C

1

= 1µF Unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ.

Max

Unit

I

Q

Quiescent

Current

1x Mode, 3.0≤V

IN

≤5.5, Active,

No Load Current

0.3

0.6

mA

2x Mode, 3.0≤V

IN

≤5.5, Active,

No Load Current

2 5

I

SHDN

Shutdown Current

EN1, EN2, EN3 = 0

1

µA

I

DX

I

SINK

Current Accuracy (Note 3)

19 20 21 mA

I

D-Match

Current Matching Between Any Two
Current Sink Inputs (Note 4)

V

F

: D1:D9 = 3.6V

1

2

%

R

out

Open Loop V

OUT

Resistance

1x mode

0.5

Ω

2 x mode

4.5

V

TH

1x to 2x Transition Threshold at Any
I

SINK

Pin

I

DX

= 20mA

150

mV

V

HS

Mode Transition Hysteresis

250

mV

T

SS

Soft-Start

Time

100 µs

Fsw Switching

Frequency

1.2 MHz

V

EN1, 2,3 (L)

EN1,2,3 Threshold Low

V

IN

= 2.7V

0.4

V

V

EN1,2,3(H)

EN1,2,3 Threshold High

V

IN

= 5.5V

1.4

V

T

EN1,2,3

EN1,2,3

Off

Timeout

20 ms

UVLO V

IN

Under-Voltage Lockout

1.8

2

2.2

V

I

EN1,2,3

EN1,2,3 Input Leakage

-1

1

µA

T

SHDN

Thermal shutdown Protection

160

°C

T

HYS

Thermal shutdown hysteresis

10

°C

θ

JA

Thermal Resistance Junction-to-
Ambient

QFN3030-20 (Note 5)

52

o

C/W

Notes: 3. Determined by the average current levels of all active channels.
4. Determined by the maximum sink current (MAX), the minimum sink current (MIN), and the average sink current (AVG). Two matching numbers are
calculated as (MAX-AVG)/AVG and (AVG-MIN)/AVG. The largest number of the two (worst case) is considered as the matching data.
5. Device mounted on FR-4 substrate, 2"*2", 2oz copper, double-sided PC board, with minimum recommended pad on top layer and
4 vias to bottom layer.

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