Diodes AL8806 - Manual (Page 3)

AL8806
Document number: DS35144 Rev. 5 - 2
3 of 15
www.diodes.com
July 2013
© Diodes Incorporated
AL8806
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Ratings Unit
ESD HBM Human Body Model ESD Protection 2.5 kV
ESD MM Machine Model ESD Protection 200 V
V IN Continuous V IN pin voltage relative to GND -0.3 to +40 V
V
SW
SW voltage relative to GND -0.3 to +40 V
V CTRL
CTRL pin input voltage -0.3 to +6 V
I
SW-RMS
DC or RMS switch current 1.65 A
I
SW-PK
Peak switch current (<10%) 3 A
T
J
Junction Temperature 150 °C
T
LEAD
Lead Temperature Soldering 300 °C
T ST
Storage Temperature Range -65 to +150 °C
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling
and transporting these devices.
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V
IN
Operating Input Voltage relative to GND 6.0 36 V
V
CTRLH
Voltage High for PWM dimming relative to GND 2.6 5.5 V
V
CTRLDC
Voltage range for 20% to 100% DC dimming relative to GND 0.5 2.5 V
V CTRLL
Voltage Low for PWM dimming relative to GND 0 0.4 V
I
SW
DC or RMS switch current 1.5 A
f OSC
Switching Frequency 1 MHz
T
J
Junction Temperature Range -40 +125 °C
Electrical Characteristics
(@V IN = 12V, T A = +25°C, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
V
INSU
Internal regulator start up threshold V
IN
rising 5.9 V
V INSH
Internal regulator hysteresis threshold V IN falling 100 300 mV
I
Q
Quiescent current Output not switching (Note 4) 350 µA
I
S
Input supply Current CTRL pin floating f = 250kHz 1.8 5 mA
V
TH
Set current Threshold Voltage V
CTRL
≥ 2.6V or floating. 95 100 105 mV
V
TH-H
Set threshold hysteresis ±20 mV
I SET
SET pin input current V SET = V IN -0.1 16 22 µA
R
CTRL
CTRL pin input resistance Referred to internal reference 50 k Ω
V REF
Internal Reference Voltage 2.5 V
R
DS(on)
On Resistance of SW MOSFET I
SW
= 1A 0.18 0.35 Ω
I
SW_Leakage
Switch leakage current V
IN
=36V 0.5 μA

JA
Thermal Resistance Junction-to-Ambient (Note 5) MSOP-8EP (Note 6) 69
C/W

JC
Thermal Resistance Junction-to-Case (Note 5) MSOP-8EP (Note 6) 4.3
Notes: 4. AL8806 does not have a low power standby mode but current consumption is reduced when output switch is inhibited: V SENSE = 0V. Parameter is
tested with V CTRL
≤ 2.5V
5. Dominant conduction path via exposed pad. Refer to figure 5 for the device derating curve.
6. Measured on an FR4 51x51mm PCB with 2oz copper standing in still air with minimum recommended pad layout on top layer and thermal vias to
bottom layer maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed.