Al8806q, Pin descriptions, Functional block diagram – Diodes AL8806Q User Manual

Page 2: Absolute maximum ratings

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AL8806Q

Document number: DS36905 Rev. 1 - 2

2 of 13

www.diodes.com

April 2014

© Diodes Incorporated

AL8806Q

Pin Descriptions

Pin Name

Pin Number

Functions

SET

1

Set Nominal Output Current Pin. Configure the output current of the device.

GND

2, 3

GND Pin

CTRL

4

Dimming and On/Off Control Input.
• Leave floating for normal operation.

(V

CTRL

= V

REF

= 2.5V giving nominal average output current I

OUTnom

= 0.1/R

S

)

• Drive to voltage below 0.4V to turn off output current
• Drive with DC voltage (0.5V < V

CTRL

< 2.5V) to adjust output current from 20% to 100% of I

OUTnom

A PWM signal (low level ≤ 0.4V and high level > 2.6; transition times less than 1us) allows the output
current to be adjusted below the level set by the resistor connected to SET input pin.

SW

5, 6

Switch Pin. Connect inductor/freewheeling diode here, minimizing track length at this pin to reduce EMI.

N/C 7

No

Connection

V

IN

8

Input Supply Pin. Must be locally decoupled to GND with > 2.2µF X7R ceramic capacitor – see applications
section for more information.

EP EP

Exposed pad:
Connect to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical
ground conduction path.


Functional Block Diagram


Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Symbol Parameter

Ratings

Unit

ESD HBM

Human Body Model ESD Protection

2.5

kV

ESD MM

Machine Model ESD Protection

200

V

ESD CDM

Charged Device Model ESD Protection

V

V

IN

Continuous V

IN

pin voltage relative to GND

-0.3 to +36

V

Transient V

IN

pin voltage relative to GND

-0.3 to +40

V

SW

SW voltage relative to GND

-0.3 to +36

V

V

CTRL

CTRL pin input voltage

-0.3 to +6

V

I

SW-RMS

DC or RMS Switch current

1.65

A

I

SW-PK

Peak Switch current (<10%)

3

A

T

J

Junction Temperature

150

°C

T

LEAD

Lead Temperature Soldering

300

°C

T

ST

Storage Temperature Range

-65 to +150

°C

Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.

Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.

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