New prod uc t al8808, Recommended operating conditions, Electrical characteristics – Diodes AL8808 User Manual

Page 3

Advertising
background image

AL8808

Document number: DS35648 Rev. 2 - 2

3 of 20

www.diodes.com

January 2013

© Diodes Incorporated

NEW PROD

UC

T

AL8808

Recommended Operating Conditions

(@T

A

= +25°C, unless otherwise specified.)

Symbol

Parameter

Min

Max

Unit

V

IN

Operating Input Voltage Relative to GND

6.0 30 V

V

CTRLH

Voltage High for PWM Dimming Relative to GND

2.6

5.5

V

V

CTRLDC

Voltage Range for 20% to 100% DC Dimming Relative to GND

0.5

2.5

V

V

CTRLL

Voltage Low for PWM Dimming Relative to GND

0

0.4

V

I

SW

Continuous Switch Current (Note 4)

1

A

f

SW

Maximum Switching Frequency

1

MHz

T

J

Junction Temperature Range

-40

+125

°C

Note:

4. Subject to ambient temperature, input voltage and switching frequency. See applications section for suggested derating.



Electrical Characteristics

(@ T

A

= +25°C, V

IN

= 12V, CTRL pin floating; unless otherwise specified.)

Symbol Parameter

Conditions Min

Typ

Max

Unit

V

INSU

Internal Regulator Start Up Voltage

V

IN

rising

5.6

V

V

INSH

Internal Regulator Hysteresis Threshold

V

IN

falling

200

mV

I

Q

Quiescent Current

V

IN

= 30V, output not switching

350

µA

I

S

Input Supply Current

f

SW

= 250kHz

450

µA

V

TH

Set Current Threshold Voltage

95

100

105

mV

V

TH-H

Set Threshold Hysteresis

±20

mV

I

SET

SET Pin Input Current

V

SET

= V

IN

-0.1

16

µA

V

CTRL

Open Circuit CTRL Pin Voltage

5

V

R

CTRL

CTRL Pin Input Resistance

Referred to internal 5V regulator.

50

kΩ

V

REF

Internal Reference Voltage

2.5

V

R

DS(on)

On Resistance of SW MOSFET

I

SW

= 0.35A

0.35

I

SW_Lkg

Switch Leakage Current

V

IN

= 30V, V

CTRL

= 0.4V, V

SENSE

= 0V

0.5

µA

t

R

SW Rise Time

V

SENSE

= 100 ±20mV, f

SW

= 250kHz

V

SW

= 0.1V to 12V to 0.1V, C

L

= 15pF

7

ns

t

F

SW Fall Time

5

ns

T

OTP

Over-Temperature Shutdown

145

°C

T

OTP-Hyst

Over-Temperature Hysteresis

10

°C

θ

JA

Thermal Resistance Junction-to-Ambient

TSOT25 (Note 5)

209

°C/W

θ

JL

Thermal Resistance Junction-to-Lead

TSOT25 (Note 5)

57

θ

JT

Thermal Resistance Junction-to-Top

TSOT25 (Note 5)

13

Notes:

5. Device mounted on FR-4 PCB (25mm x 25mm 1oz copper, minimum recommended pad layout on top layer and thermal vias to maximum area
bottom layer ground plane. For better thermal performance, larger copper pad for heat-sink is needed.
…Refer to Figure 42 for the device derating curve.



















Advertising