Diodes AS339А - Manual (Page 3)

AS339/339A
Document number: DS36838 Rev. 2 - 2
3 of 12
www.diodes.com
January 2014
© Diodes Incorporated
AS339/339A
A Product Line of
Diodes Incorporated
Functional Block Diagram
+INPUT
-INPUT
Q5 Q6
Q1
Q2 Q3
Q4
Q7
Q8
OUTPUT
V
CC
Absolute Maximum Ratings
(Note 1)
Symbol Parameter Rating Unit
V
CC
Supply Voltage 40 V
V ID Differential Input Voltage 40 V
V
IN
Input Voltage -0.3 to 40 V
I
IN
Input Current (V
IN
< -0.3V) (Note 2) 50 mA
– Output Short-Circuit to Ground Continuous –
P
D
Power Dissipation (T
A
= +25 o C)
DIP-14 1050
mW SOIC-14 890
TSSOP-14 790
T
J Operating Junction Temperature +150

C
T
STG
Storage Temperature Range -65 to +150  C
T LEAD Lead Temperature (Soldering, 10 Seconds) +260

C
Notes: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied.
Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
2. This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic
transistor action on the IC chip. This transistor action can cause the output voltages of the comparators to go to the V+ voltage level (or to ground for a
large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input
voltage, which was negative, again returns to a value greater than -0.3 V DC (at +25 o C).