Diodes APX823/APX824/APX825A - Manual (Page 5)

APX823/APX824/APX825A
PROCESSOR SUPERVISORY CIRCUITS
APX823/APX824/APX825A
Document number: DS31323 Rev. 4 - 2
5 of 12
www.diodes.com
May 2011
© Diodes Incorporated
Electrical Characteristics (cont.)
Symbol Parameter Test Conditions Min Typ. Max Unit
V
hys
Hysteresis at V
CC
Input
APX823/APX824/APX825A -23
- 50 -
mV
APX823/APX824/APX825A -26
APX823/APX824/APX825A -29
APX823/APX824/APX825A -31
APX823/APX824/APX825A -40
- 50 - APX823/APX824/APX825A -44
APX823/APX824/APX825A -46
T
S
Set-up Time V
CC
= V
TH
to (V
TH
– 100mV) 20 μs
I
IH(AV)
Average High-
level Input
Current
WDI
WDI=V
CC
,
Time average
(dc=88%) - 120 - μA
I
IL(AV)
Average Low-
level Input
Current WDI=0.3V,
V
CC
=5.5V time
average (dc=12%)
- -15 - μA
I
IH
High-level Input
Current
WDI WDI=V
CC
- 120 160 μA
I
IL
Low-level Input
Current
WDI
WDI=0.3V,
V
CC
=5.5V
- 120 160 μA
I
CC
Supply Current
WDI and MR
Unconnected, Outputs
unconnected
V
CC
= V
TH-
+0.2V - 30 40 μA
Internal Pull-up Resistor at MR - 60 - k Ω
TC V
OUT
Temperature Coefficient 50 - ppm/ o C
C
i Input Capacitance at MR , WDI V
I
= 0V to 5.5V - 5 - pF
θ
JA
Thermal Resistance Junction-to-Ambient
SOT25 (Note 4) 161
o
C/W
SOT26 (Note 4) 169
θ
JC
Thermal Resistance Junction-to-Case
SOT25 (Note 4) 27
o
C/W
SOT26 (Note 4) 28
Note: 4. Test condition for SOT25 and SOT26: Devices mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.