Diodes 74LVC2G04 - Manual (Page 4)

74LVC2G04
Document number: DS35160 Rev. 5 - 2
4 of 12
www.diodes.com
October 2013
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NEW PROD
UC
T
74LVC2G04
Electrical Characteristics
Symbol Parameter Test Conditions V
CC
-40°C to +85°C -40°C to +125°C
Min Max Min Max Unit
V
OH
High-Level Output
Voltage
I
OH
= -100μA 1.65V to 5.5V V
CC
– 0.1 V
CC
– 0.1
V
I
OH
= -4mA 1.65V 1.2 0.95
I
OH
= -8mA 2.3V 1.9 1.7
I
OH
= -16mA
3V
2.4 1.9
I
OH
= -24mA 2.3 2.0
I
OH
= -32mA 4.5V 3.8 3.4
V
OL
Low-Level Output
Voltage
I
OL
= 100μA 1.65V to 5.5V 0.1 0.1
V
I
OL
= 4mA 1.65V 0.45 0.70
I
OL
= 8mA 2.3V 0.3 0.45
I
OL
= 16mA
3V
0.4 0.60
I
OL
= 24mA 0.55 0.80
I
OL
= 32mA 4.5V 0.55 0.80
I
I
Input Current V
I
= 5.5V or GND 0 to 5.5V ± 5 ± 20 μA
I
OFF
Power Down Leakage
Current
V
I
or V
O
= 5.5V 0 ± 10 ± 20 μA
I
CC
Supply Current
V
I
= 5.5V or GND
I
O
= 0
1.65V to 5.5V 10 40 μA
ΔI
CC
Additional Supply
Current
Input at V
CC
-0.6V 3V to 5.5V 500 5000 μA
Package Characteristics
(All typical values are at V
CC
= 3.3V, T
A
= 25°C.)
Symbol Parameter Package Conditions Min Typ Max Unit
C
I
Input Capacitance Typical of all packages
Vcc = 3.3V
V
I
= V
CC
– or GND
3.5 pF
θ
JA
Thermal Resistance
Junction-to-Ambient
SOT26
(Note 6)
204
°C/W
SOT363 371
X2-DFN1410-6 430
X2-DFN1409-6 450
X2-DFN1010-6 510
θ
JC
Thermal Resistance
Junction-to-Case
SOT26
(Note 6)
52
°C/W
SOT363 143
X2-DFN1410-6 190
X2-DFN1409-6 225
X2-DFN1010-6 250
Note: 6. Test condition for SOT26, SOT363, X2-DFN1410-6, X2-DFN1409-6 and X2-DFN1010 -6: Device mounted on FR-4 substrate PC board, 2oz
copper with minimum recommended pad layout.