Diodes 74AHC86 - Manual (Page 3)

74AHC86
Document number: DS35344 Rev. 3 - 2
3 of 8
www.diodes.com
January 2013
© Diodes Incorporated
NEW PROD
UC
T
74AHC86
Recommended Operating Conditions
(Note 5) (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Conditions Min Max Unit
V
CC
Supply Voltage 2.0 5.5 V
V
I
Input Voltage 0 5.5 V
V
O
Output Voltage 0 V
CC
V
Δt/ΔV Input Transition Rise or Fall Rate
V
CC
= 3.0V to 3.6V 100
ns/V
V
CC
= 4.5V to 5.5V 20
T
A
Operating Free-Air Temperature -40 +125 °C
Note: 5. Unused inputs should be held at V
CC
or Ground.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions V
CC
T
A
= -40°C to +85°C T
A
= -40°C to +125°C
Unit
Min Max Min Max
V
IH
High-Level Input Voltage
2.0V 1.5 1.5
V 3.0V 2.1 2.1
5.5V 3.85 3.85
V
IL
Low-Level Input voltage
2.0V 0.5 0.5
V 3.0V 0.9 0.9
5.5V 1.65 1.65
V
OH
High-Level Output
Voltage
I
OH
= -50μA 2.0V 1.9 1.9
V
I
OH
= -50μA 3.0V 2.9 2.9
I
OH
= -50μA 4.5V 4.4 4.4
I
OH
= -4mA 3.0V 2.48 2.40
I
OH
= -8mA 4.5V 3.80 3.70
V
OL
Low-Level Output
Voltage
I
OL
= 50μA 2.0V 0.1 0.1
V
I
OL
= 50μA 3.0V 0.1 0.1
I
OL
= 50μA 4.5V 0.1 0.1
I
OL
= 4mA 3.0V 0.44 0.55
I
OL
= 8mA 4.5V 0.44 0.55
I
I
Input Current V
I
= GND to 5.5V 3.6V ±1 ±2 μA
I
CC
Supply Current V
I
= GND or V
CC
, I
O
= 0 3.6V 20 40 μA
Operating Characteristics
Parameter Test
Conditions
V
CC
= 2.0V V
CC
= 3.3V V
CC
= 5V
Unit
Typ Typ Typ
C
pd
Power Dissipation
Capacitance per Gate
f = 1MHz 9.7 11.5 15.5 pF
C
i
Input Capacitance V
i
= V
CC
– or GND 4.0 4.0 4.0 pF