74hc32, Electrical characteristics, Switching characteristics – Diodes 74HC32 User Manual

Page 4: Operating characteristics

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74HC32

Document number: DS35324 Rev. 3 - 2

4 of 9

www.diodes.com

January 2013

© Diodes Incorporated

74HC32


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)


Symbol Parameter

Test

Conditions

V

CC

T

A

= -40°C to +85°C

T

A

= -40°C to +125°C

Unit

Min Max Min Max

V

IH

High-level

Input Voltage

2.0V 1.5 1.5

V

4.5V 3.15 3.15

6.0V 4.2 4.2

V

IL

Low-level

input voltage

2.0V 0.5 0.5

V

4.5V 1.35 1.35

6.0V 1.8 1.8

V

OH

High-level

Output Voltage

I

OH

= -20μA

2.0V 1.9 1.9

V

I

OH

= -20μA

4.5V 4.4 4.4

I

OH

= -20μA

6.0V 5.9 5.9

I

OH

= -4.0mA

4.5V 3.84 3.7

I

OH

= -5.2mA

6.0V 5.34 5.2

V

OL

Low -level

Output Voltage

I

OL

= 20μA

2.0V 0.1 0.1

V

I

OL

= 20μA

4.5V 0.1 0.1

I

OL

= 20μA

6.0V 0.1 0.1

I

OL

= 4mA

4.5V 0.33 0.44

I

OL

= 5.2mA

6.0V 0.33 0.44

I

I

Input Current V

I

=GND to 5.5V

6.0V ±1 ±1

μA

I

CC

Supply Current V

I

= GND or V

CC,

I

O

=0

6.0V 20 40

μA


Switching Characteristics


Symbol

Parameter

Test

Conditions

V

CC

T

A

= +25°C

-40°C to +85°C

-40°C to +125°C

Unit

Min Typ Max

Max

Max

t

PD

Propagation Delay
A

N

to Y

N

Figure 1

C

L

= 50 pF

2.0V —

25

90 115

135

ns

4.5V

9

18

23

27

6.0V —

7

15

20

23

t

t

Transition Time

Figure 1

C

L

= 50 pF

2.0V —

19

75

95

110

ns

4.5V

7

15

19

22

6.0V —

6

13

16

19



Operating Characteristics

(@T

A

= +25°C, unless otherwise specified.)


Parameter Test

Conditions

V

CC

= 6V

Unit

Typ

C

pd

Power Dissipation

Capacitance per Gate

f = 1MHz

20

pF

C

I

Input Capacitance

V

I

= V

CC

– or GND

4 pF


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