Diodes 74AHC1G00 - Manual (Page 4)

74AHC1G00
SINGLE 2 INPUT POSITIVE NAND GATE
74AHC1G00
Document number: DS35169 Rev. 1- 2
4 of 8
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March 2011
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T
Electrical Characteristics
Symbol Parameter Test Conditions V
CC
25ºC -40ºC to 85ºC -40ºC to 125ºC
Unit
Min Typ. Max Min Max Min Max
V
OH
High Level
Output Voltage
I
OH
= -50 μA
2V 1.9 2 1.9 1.9
V
3V 2.9 3 2.9 2.9
4.5V 4.4 4.5 4.4 4.4
I
OH
= -4mA 3V 2.58 2.48 2.40
I
OH
= -8mA
4.5V
3.94 3.8 3.70
V
OL
Low Level
Output Voltage
I
OL
= 50 μA
2V 0.1 0.1 0.1
V
3V 0.1 0.1 0.1
4.5V 0.1 0.1 0.1
I
OL
= 4mA 3V 0.36 0.44 0.55
I
OL
= 8mA 4.5V 0.36 0.44 0.55
I
I
Input Current V
I
= 5.5 V or GND 0 to 5.5V ± 0.1 ± 1 ± 2 μA
I
CC
Supply Current
V
I
= 5.5V or GND
I
O
=0
5.5V 1 10 40 μA
C
I
Input
Capacitance V
I
= V
CC
– or
GND
5.5V
2.0
10 10 10 pF
θ
JA
Thermal
Resistance
Junction-to-
Ambient
SOT25
(Note 4)
195
o
C/W
SOT353 430
θ
JC
Thermal
Resistance
Junction-to-
Case
SOT25
(Note 4)
58
o
C/W
SOT353 155
Notes: 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
Switching Characteristics
V
CC
= 3.3V ± 0.3 (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
25ºC -40ºC to 85ºC -40ºC to 125ºC
Unit
Min Typ. Max Min Max Min Max
t
pd
A or B Y
C
L
=15pF 0.6 4.5 7.9 0.6 9.5 0.6 10.5 ns
C
L
=50pF 0.6 6.5 11.4 0.6 13.0 0.6 14.5 ns
V
CC
= 5V ± 0.5V (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
25ºC -40ºC to 85ºC -40ºC to 125ºC
Unit
Min Typ. Max Min Max Min Max
t
pd
A or B Y
C
L
=15pF 0.6 3.5 5.5 0.6 6.5 0.6 7.0 ns
C
L
=50pF 0.6 4.9 7.5 0.6 8.5 0.6 9.5 ns