Diodes 74AHC1G09 - Manual (Page 3)

74AHC1G09
Document number: DS35735 Rev. 2 - 2
3 of 9
www.diodes.com
March 2013
© Diodes Incorporated
NEW PROD
UC
T
74AHC1G09
Recommended Operating Conditions
(Note 5) (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V
CC
Operating Voltage 2.0 5.5 V
V
IH
High-Level Input Voltage
V
CC
= 2V 1.5
V V
CC
= 3V 2.1
V
CC
= 5.5V 3.85
V
IL
Low-Level input Voltage
V
CC
= 2V 0.5
V V
CC
= 3V 0.9
V
CC
= 5.5V 1.65
V
I
Input Voltage 0 5.5 V
V
O
Output Voltage 0 5.5 V
I
OL
Low-Level Output Current
V
CC
= 2V 50 uA
V
CC
= 5V ± 0.5V 4
mA
V
CC
= 3V 8
Δt/ΔV Input transition rise or fall rate
V
CC
= 3.3V ± 0.3V 100
ns/V
V
CC
= 5V ± 0.5V 20
T
A
Operating free-air temperature -40 +125 °C
Note: 5. Unused inputs should be held at V
CC
or Ground.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions V
CC
+25°C -40°C to +85°C -40°C to +125°C
Unit
Min Typ Max Min Max Min Max
V
OL
High-level Input
Voltage
I
OL
= 50μA
2V 0.1 0.1 0.1
V
3V 0.1 0.1 0.1
4.5V 0.1 0.1 0.1
I
OL
= 4mA 3V 0.36 0.44 0.55
I
OL
= 8mA 4.5V 0.36 0.44 0.55
I
I
Input Current V
I
= 5.5V or GND 0 to 5.5V ±0.1 ±1 ±2 μA
Ioz
Z-state Output
Current
V
I
= 5.5V or GND 0 to 5.5V ±0.25 ±2.5 ±10 μA
I
CC
Supply Current
V
I
= 5.5V or GND
I
O
=0
5.5V 1 10 40 μA
C
i
Input Capacitance V
i
= V
CC
– or GND 5.5V 2.0 10 10 10 pF
θ
JA
Thermal
Resistance
Junction-to-
Ambient SOT25
(Note 6)
204
°C/W
SOT353 371
θ
JC
Thermal
Resistance
Junction-to-Case SOT25
(Note 6)
52
°C/W
SOT353 143
Note: 6. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.