Diodes B1100LB - Manual (Page 2)

B1100LB
Document number: DS30077 Rev. 10 - 2
2 of 4
www.diodes.com
September 2010
© Diodes Incorporated
B1100LB
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
@ I
R
= 0.5mA
V
RRM
V
RWM
V R
100 V
RMS Reverse Voltage V
R(RMS)
70 V
Average Rectified Output Current @ T
T
= 120 °C
@ T
T
= 100 °C
I
O
1.0
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
I
FSM
50 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Terminal (Note 4) R θJT 22 °C/W
Operating and Storage Temperature Range (Note 5) T J, T STG
-65 to +175 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V
F
- - 0.75 V I
F
= 1.0A, T
A
= 25
°C
Leakage Current (Note 6) I
R
-
-
-
-
0.5
5.0
mA
V
R
= 100V, T
A
= 25
°C
V
R
= 100V, T
A
= 100 °C
Total Capacitance C T
- - 100 pF V R = 4V, f = 1MHz
Notes: 4. Valid provided that terminals are kept at ambient temperature.
5. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP
D
/dT
J
< 1/R θJA .
6. Short duration pulse test used to minimize self-heating effect.
0.01
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0
I
, IN
S
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
F
0
40
80
120
160
200
240
1 0.1 10 100
C
,
T
O
T
AL
(
p
F
)
T
C
A
P
A
C
IT
A
N
C
E
V , DC (V)
Fig. 2 Total Capacitance vs. Reverse Voltage
R
REVERSE VOLTAGE
f = 1.0MHz
T = 25 C
j
°
280