Dfls1100, Maximum ratings, Thermal characteristics – Diodes DFLS1100 User Manual

Page 2: Electrical characteristics

Advertising
background image

DFLS1100

Document number: DS30497 Rev. 11 - 2

2 of 5

www.diodes.com

September 2013

© Diodes Incorporated

DFLS1100

POWERDI is a registered trademark of Diodes Incorporated.



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.

Characteristic Symbol

Value

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

V

RRM

V

RWM

V

R

100 V

RMS Reverse Voltage

V

R(RMS)

71 V

Forward current rms (T

C

= +160°C, D = 0.5)

I

F(RMS)

2

A

Average Forward Current

I

F(AV)

1.0 A

Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load

I

FSM

50 A

Repetitive peak reverse current
tp = 2

μs, f = I kHz square

I

RRM

1.0 A

Repetitive Peak Avalanche Power
tp = 1

s, T

J

= +25°C

P

ARM

1500 W

Non-repetitive peak reverse current
tp = 100

μs square

I

RSM

1.0 A

Critical rate of rise of reverse voltage (rated V

R

, T

J

= +25°C)

dV/dt 10000

V/

μs




Thermal Characteristics

Characteristic Symbol

Typ

Max

Unit

Thermal Resistance Junction to Soldering (Note 5)

R

JS

— 7

°C/W

Thermal Resistance Junction to Ambient (Note 6) T

A

= +25°C

R

JA

125 —

Thermal Resistance Junction to Case (Note 6) T

A

= +25°C

R

JC

21 —

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +175

C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Reverse Breakdown Voltage (Note 7)

V

(BR)R

100

V

I

R

= 1

A

Forward Voltage

V

F

0.77

V

I

F

= 1.0A, T

A

= +25

C



0.58

0.62

I

F

= 1.0A, T

A

= +125

C





0.86

I

F

= 2.0A, T

A

= +25

C



0.65

0.7

I

F

= 2.0A, T

A

= +125

C

Leakage Current (Note 7)

I

R

1

A V

R

= 100V, T

A

= +25

C



0.2 0.5

mA

V

R

= 100V, T

A

= +125

C

Total Capacitance

C

T

36

pF

V

R

= 5V

DC

,

f

= 1MHz

Notes:

5. Theoretical R

θJS

calculated from the top center of the die straight down to the PCB/cathode tab solder junction.

6. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

















Advertising