Diodes MBR1030 – MBR1050 - Manual (Page 2)

MBR1030 – MBR1050
Document number: DSc23009 Rev. 10 - 2
2 of 4
www.diodes.com
June 2013
© Diodes Incorporated
MBR1030 – MBR1050
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Characteristic Symbol
MBR
1030 MBR
1035 MBR
1045 MBR
1050
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 7) V
RRM
V
RWM
V
R
30 35 45 50 V
RMS Reverse Voltage V
R(RMS)
21 24.5 31.5 35 V
Average Rectified Output Current
(Note 4) @T
C
= +125°C
I
O
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
150 A
Thermal Characteristics
Characteristic Symbol
MBR
1030 MBR
1035 MBR
1045 MBR
1050
Unit
Typical Thermal Resistance Junction to Case (Note 5) R
θJC
2.5 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
MBR
1030 MBR
1035 MBR
1045 MBR
1050
Unit
Forward Voltage Drop @ I
F
= 10A, T
C
= +25°C
@ I
F
= 10A, T
C
= +125°C
V
FM
0.84
0.57 0.95
0.70
V
Peak Reverse Current @T
C
= +25°C
at Rated DC Blocking Voltage (Note 7) @T
C
= +125°C
I
RM
0.1
15
0.1
25
mA
Typical Total Capacitance (Note 5) C
T
400 pF
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. RoHS revision 13.2.2003. High temperature solder exemptions applied, see EU Directive Annex Note 7.
7. Short duration pulse test used to minimize self-heating effect.
0
2
4
6
8
10
0 50 100 150
I,
A
V
E
R
A
G
E
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
(A
V
)
T , CASE TEMPERATURE ( C)
Figure 1 Forward Current Derating Curve
C
°
0.1
1.0
10
50
0.2 0.4 1.0
I,
I
N
S
TA
N
TA
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
F
MBR1030 - MBR1045
MBR1050 / MBR1060