Diodes MBR730 – MBR750 - Manual (Page 2)

MBR730 – MBR750
Document number: DS23007 Rev. 10 - 2
2 of 4
www.diodes.com
May 2013
© Diodes Incorporated
MBR730 – MBR750
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
MBR
730
MBR
740
MBR
750
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
30 40 50 V
RMS Reverse Voltage V
R(RMS)
21 28 35 V
Average Rectified Output Current
(Note 4) @ T
C
= +125°C
I
O
7.5 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
150 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 4) R
θJC
3.5 °C/W
Voltage Rate of Change (Rated V
R
) dV/dt 10,000 V/µs
Operating Temperature Range T
J
-55 to +150 °C
Storage Temperature Range T
STG
-55 to +175 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
MBR
730
MBR
740
MBR
750
Unit
Forward Voltage Drop @ I
F
= 7.5A, T
J
= +25°C
(Note 6) @ I
F
= 7.5A, T
J
= +125°C
@ I
F
= 15A, T
J
= +25°C
@ I
F
= 15A, T
J
= +125°C
V
FM
—
0.57
0.84
0.72
0.75
0.65
—
—
V
Peak Reverse Current @ T
J
= +25°C
at Rated DC Blocking Voltage @ T
J
= +125°C
I
RM
0.1
15
0.5
50
mA
Typical Total Capacitance (Note 5) C
T
400 pF
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. Short duration pulse test used to minimize self-heating effect.
0 50 100 150
I,
A
V
E
R
A
G
E
F
WD
C
U
R
R
EN
T
(A
)
(A
V
)
T , CASE TEMPERATURE ( C)
Fig. 1 Fwd Current Derating Curve
C
°
0
2
4
6
8
10
0.1
1.0
10
100
0.2 0.1 0.4 0.5 0.3 0.6 0.8 0.9 0.7 1.0
I,
I
N
S
TAN
TANE
O
U
S
F
WD
C
U
R
R
EN
T
(A
)
F
V , INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ Instantaneous Fwd Characteristics
F