Diodes MBR4030PT - MBR4060PT User Manual

40a schottky barrier rectifier features, Maximum ratings and electrical characteristics, Mechanical data

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DS23019 Rev. 8 - 2

1 of 3

MBR4030PT - MBR4060PT

www.diodes.com

ã

Diodes Incorporated

MBR4030PT - MBR4060PT

40A SCHOTTKY BARRIER RECTIFIER

Features

A

B

E

G

J

L

M

N

P

Q

K

S

M

H

R

D

C

Maximum Ratings and Electrical Characteristics

@ T

A

= 25

°C unless otherwise specified

·

Schottky Barrier Chip

·

Guard Ring Die Construction for Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward Voltage Drop

·

For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications

·

Lead Free Finish, RoHS Compliant (Note 3)

Mechanical Data

·

Case: TO-3P

·

Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208

·

Polarity: As Marked on Body

·

Ordering Information: See Last Page

·

Marking: Type Number

·

Weight: 5.6 grams (approximate)

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

4030PT

MBR

4035PT

MBR

4040PT

MBR

4045PT

MBR

4050PT

MBR

4060PT

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

V

RRM

V

RWM

V

R

30

35

40

45

50

60

V

RMS Reverse Voltage

V

R(RMS)

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

@ T

C

= 125

°C

(Note 1)

I

O

40

A

Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)

I

FSM

400

A

Forward Voltage Drop

@ I

F

= 20A, T

C

= 25

°C

@ I

F

= 20A, T

C

= 125

°C

V

FM

0.70
0.60

0.80
0.70

V

Peak Reverse Current

@ T

C

= 25

°C

at Rated DC Blocking Voltage

@ T

C

= 125

°C

I

RM

1.0

100

mA

Typical Total Capacitance

(Note 2)

C

T

1100

pF

Typical Thermal Resistance Junction to Case

(Note 1)

R

qJC

1.4

°C/W

Voltage Rate of Change (Rated V

R

)

dV/dt

10,000

V/

ms

Operating and Storage Temperature Range

T

j,

T

STG

-65 to +150

°C

Notes: 1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see

EU Directive Annex Notes 5 and 7.

TO-3P

Dim

Min

Max

A

1.88

2.08

B

4.68

5.36

C

20.63

22.38

D

18.5

21.5

E

2.1

2.4

G

0.51

0.76

H

15.38

16.25

J

1.90

2.70

K

2.9

Ж

3.65

Ж

L

3.78

4.50

M

5.2

5.7

N

0.89

1.53

P

1.82

2.46

Q

2.92

3.23

R

11.70

12.84

S

¾

6.10

All Dimensions in mm

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