Diodes MBR3030PT - MBR3060PT User Manual

30a schottky barrier rectifier features, Maximum ratings and electrical characteristics, Mechanical data

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DS23017 Rev. 8 - 2

1 of 3

MBR3030PT - MBR3060PT

www.diodes.com

ã

Diodes Incorporated

MBR3030PT - MBR3060PT

30A SCHOTTKY BARRIER RECTIFIER

Features

A

B

E

G

J

L

M

N

P

Q

K

S

M

H

R

D

C

Maximum Ratings and Electrical Characteristics

@ T

A

= 25

°C unless otherwise specified

·

Guard Ring Die Construction for
Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward Voltage Drop

·

For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications

·

Lead Free Finish, RoHS Compliant (Note 4)

Mechanical Data

·

Case: TO-3P

·

Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish

¾ Bright Tin. Plated Leads Solderable

per MIL-STD-202, Method 208

·

Polarity: As Marked on Body

·

Ordering Information: See Last Page

·

Marking: Type Number

·

Weight: 5.6 grams (approximate)

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

3030PT

MBR

3035PT

MBR

3040PT

MBR

3045PT

MBR

3050PT

MBR

3060PT

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

V

RRM

V

RWM

V

R

30

35

40

45

50

60

V

RMS Reverse Voltage

V

R(RMS)

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

@ T

C

= 125

°C

Total Device (See Fig. 1)

I

O

30

A

Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)

I

FSM

200

A

Forward Voltage Drop

@ I

F

= 20A, T

C

= 25

°C

per element (Note 3)

@ I

F

= 20A, T

C

= 125

°C

@ I

F

= 30A, T

C

= 25

°C

@ I

F

= 30A, T

C

= 125

°C

V

FM

¾

0.60
0.76
0.72

0.75
0.65
0.80
0.75

V

Peak Reverse Current

@ T

C

= 25

°C

at Rated DC Blocking Voltage, per element @ T

C

= 125

°C

I

RM

1.0

60

5.0

100

mA

Typical Total Capacitance

(Note 2)

C

T

500

pF

Typical Thermal Resistance Junction to Case

(Note 1)

R

qJc

1.4

°C/W

Voltage Rate of Change (Rated V

R

)

dV/dt

10,000

V/µs

Operating Temperature Range

T

j

-65 to +150

°C

Storage Temperature Range

T

STG

-65 to +175

°C

Notes: 1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Pulse width

£300 ms, duty cycle £2%.

4.

RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see

EU Directive Annex Notes 5 and 7.

TO-3P

Dim

Min

Max

A

1.88

2.08

B

4.68

5.36

C

20.63

22.38

D

18.5

21.5

E

2.1

2.4

G

0.51

0.76

H

15.38

16.25

J

1.90

2.70

K

2.9

Ж

3.65

Ж

L

3.78

4.50

M

5.2

5.7

N

0.89

1.53

P

1.82

2.46

Q

2.92

3.23

R

11.70

12.84

S

¾

6.10

All Dimensions in mm

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