Diodes GDZ3V9LP3 - GDZ8V2LP3 - Manual (Page 2)

GDZ3V9LP3 - GDZ8V2LP3
Document number: DS35065 Rev. 15 - 2
2 of 4
www.diodes.com
August 2013
© Diodes Incorporated
GDZ3V9LP3 - GDZ8V2LP3
ADVAN
CE I
N
F
O
RM
ATI
O
N
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) T
A
= +25°C P
D
250 mW
Thermal Resistance, Junction to Ambient Air (Note 5) T
A
= +25°C R
θJA
500 C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Type
Number
Marking
Code
Zener Voltage Range
(Note 6)
Maximum
Reverse
Current
(Note 6)
V
Z
@ I
ZT
I
ZT
I
R
@ V
R
Nom (V) Min (V) Max (V) mA µA V
GDZ3V9LP3 KJ 3.9 3.740 4.160 5 5 1.0
GDZ4V7LP3 KL 4.7 4.420 4.900 5 2.0 1.0
GDZ5V1LP3 KM 5.1 4.840 5.370 5 0.2 2.0
GDZ5V6LP3 KN 5.6 5.310 5.920 5 1.0 2.5
GDZ6V0LP3 KW 6.0 5.676 6.324 5 1.0 2.8
GDZ6V2LP3 KO 6.2 5.860 6.530 5 1.0 3.0
GDZ6V8LP3 KT 6.8 6.470 7.140 5 0.5 3.5
GDZ7V5LP3 KQ 7.5 7.060 7.840 5 0.5 4.0
GDZ8V2LP3 KX 8.2 7.760 8.640 5 0.5 5.0
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can
be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0
0.05
0.10
0.15
0.20
0.25
0.30
0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 1 Power Derating Curve
A
P
, P
O
WE
R
DI
SSI
P
A
T
IO
N
(W
)
D
Note 5
0.2 0.4 0.6 0.8 1.0 1.2
I
, INS
TAN
TANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(mA
)
F 0.01
0.1
1
10
100
1,000
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics
F
T = 25°C
A
T = -55°C
A
T = 50°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A