Thermal characteristics, Electrical characteristics – Diodes GDZ3V9LP3 - GDZ8V2LP3 User Manual

Page 2

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GDZ3V9LP3 - GDZ8V2LP3

Document number: DS35065 Rev. 15 - 2

2 of 4

www.diodes.com

August 2013

© Diodes Incorporated

GDZ3V9LP3 - GDZ8V2LP3

ADVAN

CE I

N

F

O

RM

ATI

O

N







Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 5)

T

A

= +25°C

P

D

250 mW

Thermal Resistance, Junction to Ambient Air (Note 5) T

A

= +25°C

R

θJA

500

C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

C





Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Type

Number

Marking

Code

Zener Voltage Range

(Note 6)

Maximum

Reverse

Current

(Note 6)

V

Z

@ I

ZT

I

ZT

I

R

@

V

R

Nom (V)

Min (V)

Max (V)

mA

µA

V

GDZ3V9LP3 KJ

3.9

3.740

4.160

5 5

1.0

GDZ4V7LP3 KL

4.7

4.420

4.900

5 2.0

1.0

GDZ5V1LP3 KM

5.1

4.840

5.370

5 0.2

2.0

GDZ5V6LP3 KN

5.6

5.310

5.920

5 1.0

2.5

GDZ6V0LP3 KW

6.0

5.676

6.324

5 1.0

2.8

GDZ6V2LP3 KO

6.2

5.860

6.530

5 1.0

3.0

GDZ6V8LP3 KT

6.8

6.470

7.140

5 0.5

3.5

GDZ7V5LP3 KQ

7.5

7.060

7.840

5 0.5

4.0

GDZ8V2LP3 KX

8.2

7.760

8.640

5 0.5

5.0

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can
be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.




0

0.05

0.10

0.15

0.20

0.25

0.30

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Figure 1 Power Derating Curve

A

P

, P

O

WE

R

DI

SSI

P

A

T

IO

N

(W

)

D

Note 5

0.2

0.4

0.6

0.8

1.0

1.2

I

, INS

TAN

TANE

O

U

S

F

O

R

WA

R

D

C

U

R

R

EN

T

(mA

)

F

0.01

0.1

1

10

100

1,000

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 2 Typical Forward Characteristics

F

T = 25°C

A

T = -55°C

A

T = 50°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A




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