Diodes DSS3515M - Manual (Page 3)

DSS3515M
Document number: DS31819 Rev. 3 - 2
3 of 5
www.diodes.com
January 2011
© Diodes Incorporated
DSS3515M
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-15
⎯ ⎯
V I
C
= -100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5) BV
CEO
-15 ⎯ ⎯ V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
)EBO
-6 ⎯ ⎯ V I
E
= -100
μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ ⎯
-100
-50
nA
μA V
CB
= -15V, I
E
= 0
V
CB
= -15V, I
E
= 0, T
A
= 150°C
Emitter Cutoff Current I
EBO
⎯ ⎯ -100 nA V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
200
150
90
⎯
⎯
⎯ ⎯
⎯
⎯
⎯
V
CE
= -2V, I
C
= -10mA
V
CE
= -2V, I
C
= -100mA
V CE = -2V, I C = -500mA
Collector-Emitter Saturation Voltage V
CE(sat)
⎯
⎯
⎯ ⎯
⎯
⎯
-25
-150
-250 mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -200mA, I
B
= -10mA
I
C
= -500mA, I
B
= -50mA
Collector-Emitter Saturation Resistance R
CE(sat)
⎯ ⎯ 500 m Ω I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage V
BE(sat)
⎯ ⎯ -1.1 V I
C
= -500mA, I
B
= -50mA
Base-Emitter Turn On Voltage V
BE(on)
⎯ ⎯ -0.9 V V
CE
= -2V, I
C
= -100mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ ⎯ 10 pF V
CB
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product f
T
100 340 ⎯ MHz V
CE
= -5V, I
C
= -100mA, f = 100MHz
Notes: 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.
0
0.20
0.40
0.60
0.80
1.00
0 1 2 3 4 5
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
-I
,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
0
100
200
300
400
500
600
700
800
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A