Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DXTP19020DP5 User Manual
Page 2
DXTP19020DP5
Document number: DS32012 Rev. 3 - 2
2 of 5
March 2010
© Diodes Incorporated
DXTP19020DP5
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
PowerDI is a registered trademark of Diodes Incorporated.
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-25 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Collector Voltage (Reverse Blocking)
V
ECO
-4 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-8 A
Base Current
I
B
-1 A
Peak Pulse Current
I
CM
-15 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation @ T
A
= 25°C (Note 4)
P
D
1.3 W
Thermal Resistance, Junction to Ambient Air (Note 4) @T
A
= 25°C
R
θJA
96.1 °C/W
Power Dissipation @ T
A
= 25°C (Note 5)
P
D
3 W
Thermal Resistance, Junction to Ambient Air (Note 5) @T
A
= 25°C
R
θJA
41.7 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 4. Device mounted on FR-4 PCB, 2 oz. copper, minimum recommended pad layout.
5. Device mounted on FR-4 PCB, 2 oz. copper, collector pad dimensions 0.42inch
2
.
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max Unit
Test
Condition
Collector-Base Breakdown Voltage
V
(BR)CBO
-25 -55
⎯
V
I
C
= -100
μA
Collector-Emitter Breakdown Voltage (Note 6)
V
(BR)CEO
-20 -50
⎯
V
I
C
= -10mA
Emitter-Collector Breakdown Voltage (Reverse Blocking)
V
(BR)ECX
-4 -8.6
⎯
V
I
E
= -100
μA, R
BC
< 1k
Ω or
0.25V > V
CB
> -0.25V
Emitter-Base Breakdown Voltage (Reverse Blocking)
V
(BR)ECO
-4 -8.6
⎯
V
I
E
= -100
μA
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7 -8.2
⎯
V
I
E
= -100
μA
Collector Cutoff Current
I
CBO
⎯
<1
⎯
50
0.5
nA
μA
V
CB
= -25V
V
CB
= -25V, T
amb
= 100 °C
Emitter Cutoff Current
I
EBO
⎯
<1 -50 nA
V
EB
= -5.6V
Collector-Emitter Saturation Voltage (Note 6)
V
CE(sat)
⎯
-40
-97
-115
-220
-47
-130
-145
-275
mV
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -10mA
I
C
= -2A, I
B
= -40mA
I
C
= -8A, I
B
= -800mA
Base-Emitter Saturation Voltage (Note 6)
V
BE(sat)
⎯
-1050 -1150 mV I
C
= -8A, I
B
= -800mA
Base-Emitter Turn-On Voltage (Note 6)
V
BE(on)
⎯
-930 -1000 mV
I
C
= -8A, V
CE
= -2V
DC Current Gain (Note 6)
h
FE
300
200
45
⎯
450
290
70
25
900
⎯
⎯
⎯
⎯
I
C
= -100mA, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -8A, V
CE
= -2V
I
C
= -15A, V
CE
= -2V
Transition Frequency
f
T
⎯
176
⎯
MHz
I
C
= -50mA, V
CE
= -10V,
f = 50MHz
Input Capacitance (Note 6)
C
ibo
⎯
⎯
400 pF
V
EB
= -0.5V, f = 1MHz
Output Capacitance (Note 6)
C
obo
⎯
36 45 pF
V
CB
= -10V, f = 1MHz
Delay Time
t
d
⎯
23
⎯
ns
I
C
= -1A, V
CC
= -10V,
I
B1
= -I
B2
= -50mA
Rise Time
t
r
⎯
18.4
⎯
Storage Time
t
s
⎯
266
⎯
Fall Time
t
f
⎯
49.6
⎯
Notes:
6. Pulse Test: Pulse width
≤300μs. Duty cycle ≤2.0%.