Diodes FMMTL717 - Manual

C
B
E
SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – DECEMBER 1997
FEATURES
Very low equivalent on-resistance; R
CE(sat)
=160m
Ω
at 1.25A
COMPLEMENTARY TYPE – FMMTL617
PARTMARKING DETAIL – L77
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-12 V
Collector-Emitter Voltage V
CEO
-12 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-1.25 A
Peak Pulse Current I
CM
-4 A
Base Current I
B
-200 mA
Power Dissipation at T
amb
=25°C P
tot
-500 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
FMMTL717