Fzt1047a, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes FZT1047A User Manual
Page 2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
35
65
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
CES
35
55
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
CEO
10
16
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
35
60
V
I
C
=100
µ
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.9
V
I
E
=100
µ
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=20V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
V
CES
=20V
Collector-Emitter
Saturation Voltage
V
CE(sat)
25
50
140
220
40
70
200
350
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=15mA*
I
C
=5A, I
B
=25mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
925
1000
mV
I
C
=5A, I
B
=25mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
890
975
mV
I
C
=5A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
280
290
300
200
60
430
440
450
330
110
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
85
110
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
130
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
t
off
230
ns
I
C
=4A, I
B
=
±
40mA,
V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
FZT1047A