Fzt1147a, Electrical characteristics (at t, 25°c) – Diodes FZT1147A User Manual
Page 2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
VALUE
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-15
-35
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
CES
-12
-25
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
CEO
-12
-25
V
I
C
=-10mA *
Collector-Emitter
Breakdown Voltage
V
CEV
-12
-25
V
I
C
=-100
µ
A, V
EB
=+1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
-8.5
V
I
E
=-100
µ
A
Collector Cut-Off Current
I
CBO
-0.3
-100
nA
V
CB
=-12V
Emitter Cut-Off Current
I
EBO
-0.3
-100
nA
V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-0.3
-100
nA
V
CE
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-25
-70
-90
-115
-250
-50
-110
-130
-170
-400
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-6mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-950
-1050
mV
I
C
=-5A, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-905
-1000
mV
I
C
=-5A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
200
150
90
450
400
340
245
145
50
850
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
I
C
=-20A, V
CE
=-2V*
Transition Frequency
f
T
115
MHz
I
C
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
cb
80
pF
VCB=-10V, f=1MHz
Switching Times
t
on
150
ns
I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
t
off
220
ns
I
C
=-4A, I
B
=
±
40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%.
FZT1147A