Electrical characteristics, Fzt649, A product line of diodes incorporated – Diodes FZT649 User Manual
Page 4
FZT649
Document Number DS33148 Rev. 5 - 2
4 of 7
March 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT649
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
35
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
25
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7
V
I
E
= 100µA
Collector Cut-Off Current
I
CBO
0.1
µA
V
CB
= 30V
10
V
CB
= 30V, T
A
= +100°C
Emitter Cut-Off Current
I
EBO
100 nA
V
EB
= 4V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
0.12
0.3
V
I
C
= 1A, I
B
= 100mA
0.40 0.6
I
C
= 3A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
0.9
1.25 V
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(on)
0.8 1.0 V I
C
= 1A, V
CE
= 2V
DC Current Gain (Note 9)
h
FE
70 200
I
C
= 50mA, V
CE
= 2V
100 200 300
I
C
= 1A, V
CE
= 2V
75 150
I
C
= 2A, V
CE
= 2V
15 50
I
C
= 6A, V
CE
= 2V
Current Gain-Bandwidth Product
f
T
150 240
MHz
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
Switching Times
t
on
55
ns
I
C
= 500mA, V
CC
= 10V,
I
B1
= -I
B2
= 50mA
t
off
300 -
Output Capacitance
C
obo
25 50 pF
V
CB
= 10V, f = 1MHz
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%