Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes FMMTL718 User Manual

Page 2: Fmmtl718, A product line of diodes incorporated

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FMMTL718

Document Number: DS33132 Rev. 2 - 2

2 of 5

www.diodes.com

June 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

FMMTL718



Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-20 V

Collector-Emitter Voltage

V

CEO

-20 V

Emitter-Base Voltage

V

EBO

-5 V

Continuous Collector Current

I

C

-1 A

Peak Pulse Current

I

CM

-2 A

Base Current

I

B

-200 mA


Thermal Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Power Dissipation

(Note 4)

P

D

500

mW

Thermal Resistance, Junction to Ambient

(Note 4)

R

θJA

250

°C/W

Thermal Resistance, Junction to Lead

(Note 5)

R

θJL

197

°C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Notes:

4. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).

Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Collector-Base Breakdown Voltage

BV

CBO

-20 -65

V I

C

= -100 µA

Collector-Emitter Breakdown Voltage (Note 6)

BV

CEO

-20 -55

V I

C

= -10 mA

Emitter-Base Breakdown Voltage

BV

EBO

-5 -8.8

V I

E

= -100 µA

Collector Cutoff Current

I

CBO

-10

nA

V

CB

= -15V

Emitter Cutoff Current

I

EBO

-10

nA

V

EB

= -4V

Collector Emitter Cutoff Current

I

CES

-10

nA

V

CE

= -15V

Static Forward Current Transfer Ratio
(Note 6)

h

FE

300
300
200
120

50

500
450
320
200

80

I

C

= -10mA, V

CE

= -2V

I

C

= -100mA, V

CE

= -2V

I

C

= -0.5A, V

CE

= -2V

I

C

= -1A, V

CE

= -2V

I

C

= -1.5A, V

CE

= -2V

Collector-Emitter Saturation Voltage
(Note 6)

V

CE(sat)

-33

-130
-230
-315

-50

-180
-320
-450

mV
mV
mV
mV

I

C

=- 100mA, I

B

= -10mA

I

C

=- 500mA, I

B

= -20mA

I

C

= -1A, I

B

= -50mA

I

C

= -1.5A, I

B

= -100mA

Base-Emitter Turn-On Voltage(Note 6)

V

BE(on)

-0.85

-1.0 V

I

C

= -1.25A, V

CE

= -2V

Base-Emitter Saturation Voltage(Note 6)

V

BE(sat)

-0.95

-1.1

V

I

C

= -1.25A, I

B

= -100mA

Equivalent On-Resistance

R

CE(sat)

210 m

I

C

= -1.5A

Output Capacitance

C

obo

9

12 pF

V

CB

= -10V, f = 1MHz

Transition Frequency

f

T

265 MHz

V

CE

= -10V, I

C

= -50mA,

f = 100MHz

Turn-On Time

t

on

108 ns

V

CC

=-10V, I

C

=-1A

I

B1

= I

B2

= -10mA

Turn-Off Time

t

off

121 ns


Note: 6.

Measured under pulsed conditions. Pulse width

300

µs. Duty cycle

≤ 2%



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