Diodes FZT749 - Manual (Page 4)

FZT749
Document Number DS33162 Rev. 5 - 2
4 of 7
www.diodes.com
May 2013
© Diodes Incorporated
FZT749
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-35 — — V I C = -100µA
Collector-Emitter Breakdown Voltage (Note 11) BV
CEO
-25 — — V I
C
= -10mA
Emitter-Base Breakdown Voltage BV
EBO
-7 — — V I
E
= -100µA
Collector Cut-off Current I
CBO
— <1 -100 nA V
CB
= -30V
— — -10 µA V
CB
= -30V, T
AMB
= +100°C
Emitter Cut-off Current I
EBO
— <1 -100 nA V EB = -5.6V
Collector-Emitter Saturation Voltage (Note 11) V
CE(SAT)
— -0.12 -0.3
V
I
C
= -1A, I
B
= -100mA
— -0.40 -0.6 I C = -3A, I B = -300mA
Base-Emitter Saturation Voltage (Note 11) V
CE(SAT)
— -0.9 -1.25 V I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 11) V
BE(ON)
— -0.8 -1.0 V I
C
= -1A, V
CE
= -2V
DC Current Gain (Note 11) h
FE
70 200 —
—
I
C
= -50mA, V
CE
= -2V
100 200 300 I
C
= -1A, V
CE
= -2V
75 570 — I C = -2A, V CE = -2V
15 50 — I
C
= -6A, V
CE
= -2V
Current Gain-Bandwidth Product (Note 11) f
T
100 160 — MHz
V
CE
= -5V, I
C
= -100mA
f = 100MHz
Turn-On Time t
on
— 40 — ns V
CC
= -10V, I
C
= -500mA
I B1 = I B2 = -50mA Turn-Off Time t
off
— 450 — ns
Output Capacitance (Note 11) C
obo
— 55 100 pF V
CB
= -10V, f = 1MHz
Note: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.