Absolute maximum ratings, Thermal characteristics, Esd ratings – Diodes DN0150BLP4 User Manual
Page 2: Electrical characteristics
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 5 - 2
2 of 5
December 2013
© Diodes Incorporated
DN0150ALP4 / DN0150BLP4
NEW PROD
UC
T
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current – Continuous
I
C
100 mA
Peak Pulse Collector Current
I
CM
200 mA
Base Current
I
B
30 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
450 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
278 °C/W
Thermal Resistance, Junction to Leads (Note 6)
R
θJL
110 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
ESD Ratings
(Note 7)
Characteristic Symbol
Value
Unit
JEDEC
Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
60 — — V
I
C
= 10μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
50 — — V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
5 — — V
I
E
= 10μA, I
C
= 0
Collector Cut-Off Current
I
CBO
— — 0.1 μA
V
CB
= 60V, I
E
= 0
Emitter Cut-Off Current
I
EBO
— — 0.1 μA
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 8)
Collector-Emitter Saturation Voltage
V
CE(SAT)
— 0.10 0.25 V
I
C
= 100mA, I
B
= 10mA
DC Current Gain DN0150ALP4
DN0150BLP4
h
FE
120 — 240
—
V
CE
= 6V, I
C
= 2mA
200 — 400
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
60 — — MHz
V
CE
= 10V, I
E
= -1mA
f = 30MHz
Output Capacitance
C
ob
— 1.3 — pF
V
CB
= 10V, I
E
= 0,
f = 1MHz
Notes:
5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state. The entire exposed collector pad is attached to the heat sink.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
8
. Measured under pulsed conditions. Pulse width
300µs. Duty cycle 2%