Diodes DN0150BDJ - Manual

DN0150ADJ / DN0150BDJ
Document number: DS31484 Rev. 3 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated
DN0150ADJ / DN0150BDJ
NEW PROD
UC
T
DUAL NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
• Ultra Small Package
Mechanical Data
• Case:
SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.0027 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
50 V
Emitter-Base Voltage V
EBO
5 V
Collector Current – Continuous I
C
100 mA
Base Current I
B
30 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 3) R θJA 417 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(
BR)CBO
60 — — V I
C
= 10 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V(
BR)CEO
50 — — V I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage V(
BR)EBO
5 — — V I
E
= 10 μA, I
C
= 0
Collector Cut-Off Current I
CBO
— — 0.1
μA
V
CB
= 60V, I
E
= 0
Emitter Cut-Off Current I
EBO
— — 0.1 μA
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
— 0.10 0.25 V I
C
= 100mA, I
B
= 10mA
DC Current Gain DN0150ADJ
DN0150BDJ
h
FE
120 — 240
— V
CE
= 6V, I
C
= 2mA
200 — 400
SMALL SIGNAL CHARACTERISTICS
Transition Frequency f T
60 — — MHz
V
CE
= 10V, I
E
= -1mA
f = 30MHz
Output Capactiance C
ob
— 1.3 — pF
V CB = 10V, I E = 0,
f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤2%
Device Schematic Top View
SOT-963
6
Q1 Q2
5 4
3 1 2
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