Electrical characteristics, Dnls350e – Diodes DNLS350E User Manual
Page 2
DNLS350E
Document number: DS31231 Rev. 3 - 2
2 of 5
April 2009
© Diodes Incorporated
DNLS350E
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Test
Conditions
OFF CHARACTERISTICS
Collector-Base Cutoff Current
I
CBO
⎯
⎯
100 nA
V
CB
= 50V, I
E
= 0
⎯
⎯
50
μA V
CB
= 50V, I
E
= 0, T
A
= 150°C
Emitter-Base Cutoff Current
I
EBO
⎯
⎯
100 nA
V
EB
= 5V, I
C
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
50
⎯
⎯
V
I
C
= 100
μA
Collector-Emitter Breakdown Voltage (Note 5)
V
(BR)CEO
50
⎯
⎯
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
⎯
⎯
V
I
E
= 100
μA
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
200
⎯
⎯
⎯
V
CE
= 2V, I
C
= 0.5A
200
⎯
⎯
V
CE
= 2V, I
C
= 1A
100
⎯
⎯
V
CE
= 2V, I
C
= 2A
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
90
mV
I
C
= 0.5A, I
B
= 50mA
⎯
⎯
170
I
C
= 1A, I
B
= 50mA
⎯
⎯
290
I
C
= 2A, I
B
= 200mA
Equivalent On-Resistance
R
CE(SAT)
⎯
62 145
m
Ω I
E
= 2A, I
B
= 200mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
⎯
1.2 V
I
C
= 2A, I
B
= 200mA
Base-Emitter Turn-on Voltage
V
BE(ON)
⎯
⎯
1.1 V
V
CE
= 2V, I
C
= 1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
100
⎯
⎯
MHz
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
Output Capacitance
C
obo
⎯
⎯
30 pF
V
CB
= 10V, f = 1MHz
Notes:
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
0.4
0.8
25
50
75
100
125
150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
1.2
1.6
2.0
0
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5