Absolute maximum ratings, Thermal characteristics, Esd ratings – Diodes DP0150BLP4 User Manual

Page 2: Electrical characteristics

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DP0150ALP4 / DP0150BLP4

Document number: DS31493 Rev. 5 - 2

2 of 5

www.diodes.com

December 2013

© Diodes Incorporated

DP0150ALP4 / DP0150BLP4

NEW PROD

UC

T



Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-50 V

Collector-Emitter Voltage

V

CEO

-50 V

Emitter-Base Voltage

V

EBO

-5 V

Collector Current - Continuous

I

C

-100 mA

Peak Pulse Collector Current

I

CM

-200 mA

Base Current

I

B

-30 mA



Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

450 mW

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

278 °C/W

Thermal Resistance, Junction to Leads (Note 6)

R

θJL

110 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C




ESD Ratings

(Note 7)

Characteristic Symbol

Value

Unit

JEDEC

Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C



Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage

BV

CBO

-50 — — V

I

C

= -10μA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 8)

BV

CEO

-50 — — V

I

C

= -1mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

-5 — — V

I

E

= -10μA, I

C

= 0

Collector Cut-Off Current

I

CBO

— — -0.1 μA

V

CB

= -50V, I

E

= 0

Emitter Cut-Off Current

I

EBO

— — -0.1 μA

V

EB

= -5V, I

C

= 0

ON CHARACTERISTICS (Note 8)
Collector-Emitter Saturation Voltage

V

CE(SAT)

— -0.15 -0.3 V

I

C

= -100mA, I

B

= -10mA

DC Current Gain

DP01510ALP4

DP01510BLP4

h

FE

120 — 240

V

CE

= -6V, I

C

= -2mA

200 — 400

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

f

T

80 — — MHz

V

CE

= -10V, I

E

= 1mA

f = 30MHz

Output Capacitance

C

ob

— 1.6 — pF

V

CB

= -10V, I

E

= 0,

f = 1MHz

Notes:

5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state. The entire exposed collector pad is attached to the heat sink.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
8. Measured under pulsed conditions. Pulse width

 300µs. Duty cycle  2%

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