Diodes DNLS350Y - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
⎯ ⎯ 100 nA
V
CB
= 50V, I
E
= 0
Collector-Base Cutoff Current I
CBO ⎯ ⎯ 50 μA V
CB
= 50V, I
E
= 0, T
A
= 150°C
Emitter-Base Cutoff Current I
EBO
⎯ ⎯ 100 nA V
EB
= 5V, I
C
= 0
Collector-Emitter Cutoff Current I
CES
⎯ ⎯ 100 nA V
CE
= 50V, V
BE
= 0
Collector-Base Breakdown Voltage V
(BR)CBO
50 ⎯ ⎯ V I
C
= 100 μA
Collector-Emitter Breakdown Voltage V (BR)CEO
50 ⎯ ⎯ V I C = 10mA
Emitter-Base Breakdown Voltage V
(BR)EBO
5 ⎯ ⎯ V I
E
= 100
μA
ON CHARACTERISTICS (Note 4)
300 ⎯ ⎯
V
CE
= 2V, I
C
= 0.1A
300 ⎯ ⎯
V
CE
= 2V, I
C
= 0.5A
300 ⎯ 700 V
CE
= 2V, I
C
= 1A
200 ⎯ ⎯
V
CE
= 2V, I
C
= 2A
DC Current Gain h
FE
100 ⎯ ⎯
⎯
V
CE
= 2V, I
C
= 3A
⎯ 38 80 I
C
= 0.5A, I
B
= 50mA
⎯ 70 160 I C = 1A, I B = 50mA
⎯ 130 280 I
C
= 2A, I
B
= 100mA
⎯ 124 260 I
C
= 2A, I
B
= 200mA
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ 180 370
mV
I C = 3A, I B = 300mA
Equivalent On-Resistance R
CE(SAT)
⎯ 62 130 m
Ω I
E
= 2A, I
B
= 200mA
⎯ ⎯ 1.1 V I
C
= 2A, I
B
= 100mA
Base-Emitter Saturation Voltage V
BE(SAT) ⎯ ⎯ 1.2 V I
C
= 3A, I
B
= 300mA
Base-Emitter Turn-on Voltage V
BE(ON)
⎯ ⎯ 1.1 V V
CE
= 2V, I
C
= 1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency f T
100 ⎯ ⎯ MHz
V CE = 5V, I C = 100mA,
f = 100MHz
Output Capacitance C
obo
⎯ ⎯ 25 pF V
CB
= 10V, f = 1MHz
NEW PRODUCT
Notes: 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.
0
0.2
0.4
25 50 75 100 125 150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
0.6
0.8
1.0
0
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
0
0.5
1.0
1.5
2.0
2.5
3.0
0 1 2 3 4 5
DS31208 Rev. 4 - 2 2 of 4
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DNLS350Y
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