Diodes DPLS350Y - Manual (Page 3)

DPLS350Y
Document number: DS31149 Rev. 6 - 2
3 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DPLS350Y
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-50 — — V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 8) BV
CEO
-50 — — V I
C
= -10mA
Emitter-Base Breakdown Voltage BV
EBO
-6 — — V I
E
= -100µA
Collector-Emitter Cut-off Current I
CES
— — -100 nA V
CE
= -50V
Collector Cut-off Current I
CBO
— —
-100 nA V
CB
= -50V
-50 µA V
CB
= -50V, T
A
= +150°C
Emitter Cut-off Current I
EBO
— — -100 nA V
EB
= -5V
Static Forward Current Transfer Ratio (Note 8) h
FE
200
—
—
—
I
C
= -100mA, V
CE
= -2V
200 — I
C
= -500mA, V
CE
= -2V
200 450 I
C
= -1A, V
CE
= -2V
130 — I
C
= -2A, V
CE
= -2V
80 — I
C
= -3A, V
CE
= -2V
Collector-Emitter saturation Voltage (Note 8) V
CE(sat)
— —
-90
mV
I
C
= -500mA, I
B
= -50mA
-180 I
C
= -1A, I
B
= -50mA
-320 I
C
= -2A, I
B
= -100mA
-270 I
C
= -2A, I
B
= -200mA
-390 I
C
= -3A, I
B
= -300mA
Equivalent On-Resistance R
CE(sat)
— 67 135 mΩ I
C
= -2A, I
B
= -200mA
Base-Emitter saturation Voltage (Note 8) V
BE(sat)
— —
-1.1
V
I
C
= -2A, I
B
= -100mA
-1.2 I
C
= -3A, I
B
= -300mA
Base-Emitter Turn-On Current (Note 8) V
BE(on)
— — -1.1 V I
C
= -1A, V
CE
= -2V
Transition frequency f
T
100 — — MHz
I
C
= -100mA, V
CE
= -5V,
f = 100MHz
Collector Output Capacitance C
obo
— — 35 pF V
CB
= -10V, I
E
= 0, f = 1MHz
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
0 1 2 3 4 5
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
-I
, C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
Figure 1 Typical Collector Current vs.Collector-Emitter Voltage
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B
-I , COLLECTOR CURRENT (A)
C
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
Figure 2 Typical DC Current Gain
vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -2V
CE