Diodes DSS30101L - Manual (Page 2)

DSS30101L
Document number: DS31588 Rev. 3 - 2
2 of 6
www.diodes.com
August 2010
© Diodes Incorporated
DSS30101L
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I CM
2 A
Continuous Collector Current I C
1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
600 mW
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C R θJA 209 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 3. Device mounted on FR-4 PCB MRP
0
0.2
0.4
0.6
0.8
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N
(W
)
D
R = 209°C/W θJA
0
100
200
300
400
0.00001 0.001 0.1 10 1,000
Fig. 2 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
P(
p
k
),
PE
AK T
R
AN
SI
ENT
P
O
WE
R
(W
)
Single Pulse
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 175°C/W
θ
θ
JA
JA
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
Fig. 3 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(
t),
T
R
A
N
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 175°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1