Diodes DSS5240T - Manual (Page 4)

DSS5240T
Document number: DS31591 Rev. 4 - 2
4 of 7
www.diodes.com
May 2014
© Diodes Incorporated
DSS5240T
NEW PROD
UC
T
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-40 ⎯ ⎯ V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
-40 ⎯ ⎯ V I
C
= -10mA
Emitter-Base Breakdown Voltage BV
EBO
-5 ⎯ ⎯ V I
E
= -100µA
Collector-Base Cutoff Current I
CBO
⎯ ⎯ -100 nA V
CB
= -30V, I
E
= 0
⎯ ⎯ -50 µA V
CB
= -30V, I
E
= 0, T
A
= +150°C
Emitter-Base Cutoff Current I
EBO
⎯ ⎯ -100 nA V
EB
= -4V, I
C
= 0
ON CHARACTERISTICS (Note 9)
DC Current Gain h
FE
300 ⎯ ⎯
⎯
V
CE
= -2V, I
C
= -0.1A
260 ⎯ ⎯ V
CE
= -2V, I
C
= -0.5A
210 ⎯ ⎯ V
CE
= -2V, I
C
= -1A
100 ⎯ ⎯ V
CE
= -2V, I
C
= -2A
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ ⎯ -100
mV
I
C
= -100mA, I
B
= -1mA
⎯ 45 -110 I
C
= -500mA, I
B
= -50mA
⎯ ⎯ -225 I
C
= -750mA, I
B
= -15mA
⎯ ⎯ -225 I
C
= -1A, I
B
= -50mA
⎯ ⎯ -350 I
C
= -2A, I
B
= -200mA
Equivalent On-Resistance R
CE(SAT)
⎯ 90 220 m Ω I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ ⎯ -1.1 V I
C
= -2A, I
B
= -200mA
Base-Emitter Turn-on Voltage V
BE(ON)
⎯ ⎯ -0.75 V V
CE
= -2V, I
C
= -100mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency f
T
100 ⎯ ⎯ MHz
V
CE
= -10V, I
C
= -100mA,
f = 100MHz
Output Capacitance C
ob
⎯ ⎯ 28 pF V
CB
= -10V, f = 1MHz
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 1 2 3 4 5 6 7 8 9 10
-I
,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 1 Typical Collector Current
vs. Collector-Emitter Voltage
1 10 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Figure 2 Typical DC Current Gain vs. Collector Current
10
100
10,000
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
1,000
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = -2V
CE