Diodes DST857BDJ - Manual (Page 2)

DST857BDJ
Document number: DS32037 Rev. 1 - 2
2 of 5
www.diodes.com
January 2010
© Diodes Incorporated
DST857BDJ
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V CEO
-45 V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current - Continuous (Note 3) I
C
-100 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 3) R θJA 417 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout.
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 1 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ESI
S
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 370°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1
0.00001 0.001 0.1 10 1,000
1
10
100
1,000
P
(p
k
),
P
E
AK
T
R
ANS
IEN
T
P
O
WE
R
(W
)
0.1
Fig. 2 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
Single Pulse
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 370°C/W
θ
θ
JA
JA
0
0.1
0.2
0.3
0.4
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 3 Power Dissipation vs. Ambient Temperature
P
,
P
O
WE
R
DI
SS
IP
A
T
IO
N
(W
)
D
Note 3