Maximum ratings, Thermal characteristics, Dst857bdj – Diodes DST857BDJ User Manual

Page 2

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DST857BDJ

Document number: DS32037 Rev. 1 - 2

2 of 5

www.diodes.com

January 2010

© Diodes Incorporated

DST857BDJ





Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-50 V

Collector-Emitter Voltage

V

CEO

-45 V

Emitter-Base Voltage

V

EBO

-5.0 V

Collector Current - Continuous (Note 3)

I

C

-100 mA


Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 3)

P

D

300 mW

Thermal Resistance, Junction to Ambient (Note 3)

R

θJA

417 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes:

3. Device mounted on FR-4 PCB with minimum recommended pad layout.



0.000001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

Fig. 1 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.001

0.01

0.1

1

r(t),

T

R

ANSI

EN

T

T

H

E

R

MA

L

R

ESI

S

T

AN

C

E

T - T = P * R

(t)

Duty Cycle, D = t /t

J

A

JA

1 2

θ

R

(t) = r(t) *

θJA

R

R

= 370°C/W

θ

θ

JA

JA

P(pk)

t

1

t

2

D = 0.7

D = 0.5

D = 0.3

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.1

0.00001

0.001

0.1

10

1,000

1

10

100

1,000

P

(p

k

),

P

E

AK

T

R

ANS

IEN

T

P

O

WE

R

(W

)

0.1

Fig. 2 Single Pulse Maximum Power Dissipation

t , PULSE DURATION TIME (s)

1

Single Pulse

T - T = P * R

(t)

Duty Cycle, D = t /t

J

A

JA

1 2

θ

R

(t) = r(t) *

θJA

R

R

= 370°C/W

θ

θ

JA

JA

0

0.1

0.2

0.3

0.4

0

20

40

60

80

100

120

140

160

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 3 Power Dissipation vs. Ambient Temperature

P

,

P

O

WE

R

DI

SS

IP

A

T

IO

N

(W

)

D

Note 3


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