Diodes DXT2222A - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
75 ⎯ V I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
40 ⎯ V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
6.0 ⎯ V I
E
= 10 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ 10
nA
μA
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150°C
Collector Cutoff Current I
CEX
⎯ 10 nA V
CE
= 60V, V
EB(OFF)
= 3.0V
Emitter Cutoff Current I EBO
⎯ 10 nA V EB = 3.0V, I C = 0
Base Cutoff Current I
BL
⎯ 20 nA V
CE
= 60V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain h
FE
35
50
75
100
40
35
50
⎯
⎯
⎯
300
⎯
⎯
⎯
⎯
I C = 100
μA, V
CE = 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55°C
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
⎯
0.3
1.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage V
BE(SAT)
0.6
⎯
1.2
2.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 8 pF V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
⎯ 25 pF V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product f T
300 ⎯ MHz V CE = 20V, I C = 20mA, f = 100MHz
Noise Figure NF ⎯ 4.0 dB
V
CE
= 10V, I
C
= 150
μA,
R
S
= 1.0k Ω, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯ 10 ns
Rise Time t
r
⎯ 25 ns
V
CC
= 30V, I
C
= 150mA,
V
EB(off)
= 0.5V, I
B1
= 15mA
Storage Time t
s
⎯ 225 ns
Fall Time t
f
⎯ 60 ns
V
CC
= 30V, I
C
= 150mA,
I B1 = I B2 = 15mA
NEW PROD
UC
T
Notes: 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.
R = 125°C/W θJA
V , COLLECTOR EMITTER VOLTAGE (V)
CE
I,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
DS31156 Rev. 3 - 2 2 of 4
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DXT2222A
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