Electrical characteristics, New prod uc t – Diodes DZT2222A User Manual
Page 2
DS30481 Rev. 5 - 2
2 of 4
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DZT2222A
© Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Max
Unit
Test
Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
75
⎯
V
I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6
⎯
V
I
E
= 10
μA, I
C
= 0
⎯
10 nA
V
CB
= 50V, I
E
= 0
Collector Cut-Off Current
I
CBO
⎯
10
μA V
CB
= 50V, I
E
= 0, T
A
= 150
°C
Emitter Cut-Off Current
I
EBO
⎯
10 nA
V
EB
= 3V, I
C
= 0
Collector-Emitter Cut-Off Current
I
CEX
⎯
10 nA
V
CE
= 60V, V
EB(off)
= 3V
ON CHARACTERISTICS (Note 4)
⎯
0.3 V
I
C
= 150mA, I
B
= 15mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
1.0 V
I
C
= 500mA, I
B
= 50mA
0.6 1.2 V
I
C
= 150mA, I
B
= 15mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
2.0 V
I
C
= 500mA, I
B
= 50mA
35
⎯
I
C
= 0.1mA, V
CE
= 10V
50
⎯
I
C
= 1mA, V
CE
= 10V
75
⎯
I
C
= 10mA, V
CE
= 10V
35
⎯
I
C
= 10mA, V
CE
= 10V, T
A
= -55
°C
100 300
I
C
= 150mA, V
CE
= 10V
50
⎯
I
C
= 150mA, V
CE
= 1V
DC Current Gain
h
FE
40
⎯
V
I
C
= 500mA, V
CE
= 10V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
300
⎯
MHz I
C
= 20mA, V
CE
= 20V, f = 100MHz
Output Capacitance
C
obo
⎯
8 pF
V
CB
= 10V, I
E
= 0, f = 1MHz
Input Capacitance
C
ibo
⎯
25 pF
V
EB
= 0.5V, I
C
= 0, f = 1MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
10 ns
Rise Time
t
r
⎯
25 ns
V
CE
= 30V, V
EB(off)
= 0.5V, I
C
= 150mA, I
B1
= 15mA
Storage Time
t
s
⎯
225 ns
Fall Time
t
f
⎯
60 ns
V
CE
= 30V, I
C
= 150mA, I
B1
= I
B2
=
15mA
NEW PROD
UC
T
Notes:
4. Measured under pulsed conditions. Pulse width = 300
μS. Duty Cycle, d< = 2%.
R
= 125°C/W
θJA
V
, COLLECTOR EMITTER VOLTAGE (V)
CE
I,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C