Fcx1051a, Electrical characteristics (@ t, 25°c unless otherwise stated) – Diodes FCX1051A User Manual
Page 3
FCX1051A
© Zetex Semiconductors plc 2007
Electrical characteristics (@ T
amb
= 25°C unless otherwise stated)
Parameter Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base
breakdown voltage
V
(BR)CBO
150 V
I
C
= 100µA
Collector-emitter
breakdown voltage
V
CES
150
V
I
C
= 100µA
Collector-emitter
breakdown voltage
V
CEO
40
V
I
C
= 10mA
Collector-emitter
breakdown voltage
V
CEV
150
V
I
C
=100µA, V
EB
= 1V
Emitter-base
breakdown voltage
V
(BR)EBO
5 V
I
E
= 100µA
Collector cut-off
current
I
CBO
0.3 10 nA
V
CB
= 120V
Emitter cut-off current
I
EBO
0.3
10
nA
V
EB
= 4V
Collector emitter cut-
off current
I
CES
0.3 10 nA
V
CES
= 120V
Collector-emitter
saturation voltage
V
CE(sat)
17
25
mV
I
C
= 0.2A, I
B
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width=300
s. Duty cycle Յ2%.
85
120
mV
I
C
= 1A, I
B
140 180 mV
I
C
= 2A, I
B
170 250 mV
I
C
= 3A, I
B
250
340
mV
I
C
= 5A, I
B
= 100mA
Base-emitter saturation
voltage
V
BE(sat)
880 1000 mV I
C
= 3A, I
B
Base-emitter turn-on
voltage
V
BE(on)
840 950 mV
I
C
= 3A, V
CE
= 2V
Static forward current
transfer ratio
h
FE
290 440 1200
I
C
= 10mA, V
CE
= 2V
270
450
I
C
= 1A, V
CE
= 2V
270
360
I
C
= 3A, V
CE
= 2V
130
220
I
C
= 5A, V
CE
= 2V
40
55
I
C
= 10A, V
CE
= 2V
Transition frequency
f
T
155 MHz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
Output capacitance
C
obo
27 40 pF
V
CB
= 10V, f = 1MHz
Switching times
t
on
220
ns
I
C
= 3A, I
B
= 30mA, V
CC
= 10V
t
off
540 ns
I
C
= 3A, I
B
= 30mA, V
CC
= 10V