Diodes FZT1151A - Manual

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
* V
CEO
= -40V
* 3 Amp Continuous Current
* 5 Amp Pulse Current
* Low saturation Voltage
* High Gain
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-45 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-5 A
Continuous Collector Current I
C
-3 A
Base Current I
B
-500 mA
Power Dissipation at T
amb
=25°C † P
tot
2.5 W
Operating and Storage Temperature
Range T
j
:T
stg
-55 to +150 °C
† The power which can be dissipated assuming the device is mounted in a typical manner on
a P.C.B. with copper equal to 2 inches x 2 inches
FZT1151A
C C
C
E
B
SOT223