Diodes FZT589 User Manual
Fzt589
SOT223 PNP SILICON PLANAR MEDIUM POWER
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 - OCTOBER 1995
PARTMARKING DETAILS -
FZT589
COMPLEMENTARY TYPES - FZT489
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-50
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30
V
I
C
=-1m
Α∗
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
µ
A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-30V
Collector Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-30V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.35
-0.65
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.2
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.1
V
I
C
=-1A, V
CE
=-2V*
Static Forward
Current Transfer Ratio
h
FE
100
100
80
40
300
I
C
=-1mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
MHz
I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMT549 datasheet
FZT589
C
C
E
B
3 - 194