Diodes FZT489 - Manual (Page 4)

FZT489
Document Number DS33134 Rev. 4 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT489
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 − − V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
30 − − V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 − − V I
E
= 100µA
Collector Cut-off Current I
CBO
− − 100 nA V
CB
= 30V
Collector Cut-off Current I
CES
− − 100 nA V
CE
= 30V
Emitter Cut-off Current I
EBO
− − 100 nA V
EB
= 4V
Collector-Emitter Saturation Voltage (Note 10) V
CE(sat)
−
− −
−
0.3
0.6
V
I C = 1A, I B = 100mA
I
C
= 2A, I
B
= 200mA
Base-Emitter Saturation Voltage (Note 10) V
BE(sat)
− − 1.1 V I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 10) V
BE(on)
− −
1.0 V I
C
= 1A, V
CE
= 2V
DC Current Gain (Note 10) h
FE
100
100
60
20
−
−
−
− −
300
−
−
−
I C = 1mA, V CE = 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 4A, V
CE
= 2V
Current Gain-Bandwidth Product (Note 10) f T
150 − − MHz
V
CE
= 10V, I
C
= 50mA
f = 100MHz
Output Capacitance (Note 10) C
obo
− − 10 pF V
CB
= 10V, f = 1MHz
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%