Diodes IMT17 User Manual

Imt17, Features, Mechanical data

Advertising
background image

IMT17

Document number: DS31202 Rev. 4 - 2

1 of 4

www.diodes.com

March 2009

© Diodes Incorporated

IMT17


DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

Epitaxial Planar Die Construction

Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Mechanical Data

• Case:

SOT-26

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: See Diagram

Terminals: Finish – Matte Tin Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.016 grams (approximate)










Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-60 V

Collector-Emitter Voltage

V

CEO

-50 V

Emitter-Base Voltage

V

EBO

-5.0 V

Continuous Collector Current

I

C

-500 mA

Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 3) @T

A

= 25°C

P

D

300 mW

Thermal Resistance, Junction to Ambient Air (Note 3) @T

A

= 25°C

R

θJA

417

°C /W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage

V

(BR)CBO

-60 — —

V I

C

= -100

μA

Collector-Emitter Breakdown Voltage

V

(BR)CEO

-50 — —

V I

C

= -1.0mA

Emitter-Base Breakdown Voltage

V

(BR)EBO

-5.0 — —

V I

E

= -100

μA

Collector Cutoff Current

I

CBO

— — -0.1

μA

V

CB

= -30V

Emitter Cutoff Current

I

EBO

— — -0.1

μA

V

EB

= -4.0V

ON CHARACTERISTICS (Note 4)
DC Current Gain

h

FE

120 — 390

— V

CE

= -3.0V, I

C

= -100mA

Collector-Emitter Saturation Voltage (Note 3)

V

CE(SAT)

— — -0.6

V I

C

= -500mA, I

B

= -50mA

SMALL SIGNAL CHARACTERISTICS

Gain Bandwidth Product

f

T

— 200 —

MHz

V

CE

= -5V, I

E

= 20mA,

f = 100MHz

Output Capacitance

C

ob

— 7 — pF

V

CB

= -10V, I

E

= 0, f = 1MHz

Notes:

1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 4 or on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.



Top View

Device Schematic

E2

C2

C1

E1

B2

B1

Please click here to visit our online spice models database.

Advertising