New prod uc t, Electrical characteristics: 2222a type (npn) – Diodes DMB2227A User Manual
Page 2
DS31217 Rev. 4 - 2
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DMB2227A
© Diodes Incorporated
NEW PROD
UC
T
Electrical Characteristics: 2222A Type (NPN)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
75
⎯
V
I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
10
nA
μA
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150
°C
Collector Cutoff Current
I
CEX
⎯
10 nA
V
CE
= 60V, V
EB(OFF)
= 3.0V
Emitter Cutoff Current
I
EBO
⎯
10 nA
V
EB
= 3.0V, I
C
= 0
Base Cutoff Current
I
BL
⎯
20 nA
V
CE
= 60V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
35
50
75
100
40
50
35
⎯
⎯
⎯
300
⎯
⎯
⎯
⎯
I
C
= 100
μA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55
°C
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.3
1.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.6
⎯
1.2
2.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
8 pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
— 25 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product
f
T
300
⎯
MHz
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
10 ns
Rise Time
t
r
⎯
25 ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
Storage Time
t
s
⎯
225 ns
Fall Time
t
f
⎯
60 ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Notes:
4. Pulse test: pulse width
≤300μS, duty cycle ≤2%.